1N5226B - 1N5257B Series Half Watt Zeners
Tolerance: B = 5%
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Parameter
Value
Units
Storage Temperature Range
-65 to +200
+ 200
°C
°C
°C
Maximum Junction Operating Temperature
Lead Temperature (1/16” from case for 10 seconds)
+ 230
Total Device Dissipation
Derate above 75°C
Surge Power**
500
4.0
10
mW
mW/°C
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
DO-35
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
Electrical Characteristics
TA = 25°C unless otherwise noted
VZ
(V)
ZZ
(Ω)
IZT
(mA)
ZZK
(Ω)
IZK
(mA)
VR
(V)
IR
(µA)
TC
(%/°C)
@
@
@
Device
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
1,600
1,700
1,900
2,000
1,900
1,600
1,600
1,600
1,000
750
500
500
600
600
600
600
600
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
25
15
10
- 0.07
- 0.065
- 0.06
+/- 0.055
+/- 0.03
+/- 0.3
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
11
12
Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series
VF
NOTE: National preferred devices in BOLD
1997 Fairchild Semiconductor Corporation
1N5200B Rev. A