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5962-0520801QYC

更新时间： 2024-02-18 15:18:28

品牌	Logo	应用领域
爱特美尔 - ATMEL		静态存储器
页数	文件大小	规格书
13页	347K
描述
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM

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5962-0520801QYC 数据手册

Features

• Operating Voltage: 3.3V, 5V tolerant

• Access Time:

– 17 ns

– 15 ns

• Very Low Power Consumption

– Active: 610 mW (Max) @ 17 ns⁽¹⁾, 540 mW (Max) @ 25 ns

– Standby: 3.3 mW (Typ)

• Wide Temperature Range: -55 to +125°C

• TTL-Compatible Inputs and Outputs

• Asynchronous

• Designed on 0.25 µm Radiation Hardened Process

• No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm²

• Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019

• 500 Mils Wide FP36 Package

Rad Hard

512K x 8

5V Tolerant

Very Low Power

CMOS SRAM

• ESD Better than 2000V

• Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208

Note:

1. 650 mW (Max) @ 15 ns

Description

The AT60142FT is a very low power CMOS static RAM organized as 512K x 8 bits.

Atmel brings the solution to applications where fast computing is as mandatory as low

consumption, such as aerospace electronics, portable instruments, or embarked

systems.

AT60142FT

Utilizing an array of six transistors (6T) memory cells, the AT60142FT combines an

extremely low standby supply current (Typical value = 1 mA) with a fast access time at

15 ns over the full military temperature range. The high stability of the 6T cell provides

excellent protection against soft errors due to noise.

The AT60142FT is processed according to the methods of the latest revision of the

MIL PRF 38535 or ESCC 9000.

It is produced on a radiation hardened 0.25 µm CMOS process.

Rev. 7726B–AERO–04/09

12 3 4 5 6 7...13

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