Datasheet > 8L45-DO

8L45-DO

更新时间： 2022-02-26 12:47:20

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	1341K
描述
Trench MOS Barrier Schottky Rectifier

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

8L45-DO 数据手册

ꢀꢀꢀ

8L45 DO-201AD

Trench MOS Barrier Schottky Rectifier

Features

DO-201AD

8L45

• Advanced trench technology

• Low forward voltage drop

• Low power losses

• High efficiency operation

• Lead Free Finish, RoHS Compliant

Applications

• DC/DC Converters

• AC/DC Adaptors

Cathode

Anode

Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

VRRM

Limit

Unit

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Operating junction and storage temperature range

Typical thermal resistance per diode

IF(AV)

IFSM

TJ, TSTG

RƟJC

150

-65 to +150

°C

°C/W

DO-201AD

(Mounted on FR-4 PCB)

TYP.

MAX.

IF=2A

IF=8A

TJ=25°C

TJ=125°C

TJ=25°C

TJ=125°C

TJ=25°C

0.36

VF(1)

IR(2)

0.25

Instantaneous forward voltage

0.55

0.47

Instantaneous reverse current per diode

at rated reverse voltage

Notes:

TJ=125°C

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≦ 40 ms

www.yfwdiode.com

12 3

下载PDF

与8L45-DO相关器件

型号	品牌	描述	获取价格	数据表
8L45-DO-201AD	YFW	Trench MOS Barrier Schottky Rectifier	获取价格
8-L5	JST	Ring tongue terminal (R-type, Non-insulated)	获取价格
8-L5NS	JST	Ring tongue terminal (R-type, Non-insulated)	获取价格
8-L6	JST	Ring tongue terminal (R-type, Non-insulated)	获取价格
8L60-DO	YFW	Trench MOS Barrier Schottky Rectifier	获取价格
8L60-DO-201AD	YFW	Trench MOS Barrier Schottky Rectifier	获取价格