Datasheet > 8L60-DO

8L60-DO

更新时间： 2022-02-26 12:47:21

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	1456K
描述
Trench MOS Barrier Schottky Rectifier

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8L60-DO 数据手册

8L60 DO-201AD

Trench MOS Barrier Schottky Rectifier

Features

DO-201AD

8L60

• Advanced trench technology

• Low forward voltage drop

• Low power losses

• High efficiency operation

• Lead Free Finish, RoHS Compliant

Applications

• DC/DC Converters

• AC/DC Adaptors

Cathode

Anode

Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

VRRM

Limit

Unit

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Operating junction and storage temperature range

Typical thermal resistance per diode

IF(AV)

IFSM

TJ, TSTG

RƟJC

150

-65 to +150

°C

°C/W

(Mounted on FR-4 PCB)

TYP.

MAX.

0.38

IF=2A

IF=8A

TJ=25°C

TJ=125°C

TJ=25°C

TJ=125°C

TJ=25°C

VF(1)

IR(2)

0.27

Instantaneous forward voltage

0.48

0.44

Instantaneous reverse current per diode

at rated reverse voltage

Notes:

100

TJ=125°C

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≦ 40 ms

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