Datasheet > 8HNXXL-H-AB3-E-R

8HNXXL-H-AB3-E-R

更新时间： 2022-10-12 16:48:35

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
16页	519K
描述
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME

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8HNXXL-H-AB3-E-R 数据手册

浏览型号8HNXXL-H-AB3-E-R的Datasheet PDF文件第10页

81CXXX/81NXXX

CMOS IC

ELECTRICAL CHARACTERISTICS(Cont.)

Detection voltage (4.0V ~ 4.9V)

PARAMETER

SYMBOL CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX UNIT

×0.98

V_DF

_DF(T)

×1.02

V_DF

Detect Voltage

V_DF

_DF(T)

V_DF

Hysteresis Range

Operating Voltage

Supply Current

N-Channel

V_HYS

V_IN

×0.02 ×0.05 ×0.08

V_DF=1.6V ~ 6.0V

V_IN=4.0V

0.7

10.0

3.8

1.5

2.0

μA

I_SS

V_IN=5.0V

4.2

V_DS=0.5V, V_IN=4.0V

11.5

Output Current

P- Channel

I_OUT

V_DS=2.1V, V_IN=8.0V

-15.4

±100

ppm/°C

(CMOS output)

ΔVDF

V_DF

ΔTOPR × VDF

Temperature Characteristics

Transient Delay Time

(V_DRÆV_OUTinversion)

V_INchanges from

t_DLY

200

0.6V ~ 10V

Detection voltage (5.0V)

PARAMETER

SYMBOL CIRCUIT

TEST CONDITIONS

MIN

TYP

MAX UNIT

×0.98

V_DF

_DF(T)

×1.02

V_DF

Detect Voltage

V_DF

_DF(T)

V_DF

Hysteresis Range

V_HYS

×0.02 ×0.05 ×0.08

Operating Voltage

Supply Current

N-Channel

Output Current

P- Channel

V_IN

I_SS

V_DF=1.6V ~ 6.0V

V_IN=5.0V

0.7

10.0

4.2

2.0

μA

_DS=0.5V, V_IN=5.0V

_DS=2.1V, V_IN=8.0V

13.0

I_OUT

-15.4

±100

ppm/°C

(CMOS output)

ΔVDF

V_DF

ΔTOPR × VDF

Temperature Characteristics

Transient Delay Time

(V_DRÆV_OUTinversion)

V_INchanges from

t_DLY

200

0.6V ~ 10V

V_DF(T): established detect voltage value

Release Voltage: V_DR= V_DF+ V_HYS

* Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.

Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is

after that period (completion of release operation) because of delay circuit through current.

UNISONIC TECHNOLOGIES CO., LTD

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