Datasheet > 8A45-DO

8A45-DO

更新时间： 2022-02-26 12:47:20

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	1012K
描述
Trench MOS Barrier Schottky Rectifier

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8A45-DO 数据手册

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8A45 DO-201AD

Trench MOS Barrier Schottky Rectifier

Features

DO-201AD

• Advanced trench technology

• Low forward voltage drop

• Low power losses

8A45

• High efficiency operation

• Lead Free Finish, RoHS Compliant

Applications

• DC/DC Converters

• AC/DC Adaptors

Cathode

Anode

Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Limit

Unit

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Operating junction and storage temperature range

Typical thermal resistance per diode

VRRM

F(AV)

IFSM

150

-40 to +150

°C

, TSTG

°C/W

RƟJC

(Mounted on FR-4 PCB)

TYP.

MAX.

=2A

TJ=25°C

TJ=125°C

TJ=25°C

TJ=125°C

0.4

VF(1)

0.29

0.48

0.40

Instantaneous forward voltage

=8A

0.51

=8A

=25°C

Instantaneous reverse current per diode

at rated reverse voltage

Notes:

IR(2)

=125°C

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≦ 40 ms

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