Datasheet > 80-M112PMA025M7-K200A8

80-M112PMA025M7-K200A8

更新时间： 2023-09-03 20:33:28

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	9591K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M112PMA025M7-K200A80

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Brake Diode

Static

1,63

1,74

1,73

1,9⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 1200 V

µA

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,55

K/W

12,19

13,54

13,88

286,57

392,81

439,14

1,81

I_RM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=260 A/µs

di/dt=287 A/µs

di/dt=230 A/µs

Q_r

Recovered charge

0/15

600

125

150

2,62

μC

2,91

0,578

0,906

1,02

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

98,39

69,03

67,84

(di_rf/dt)_max

125

150

13 Oct. 2022 / Revision 3

1...4 5 678 9 10...29

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