Datasheet > 8.0SMDJ100A

8.0SMDJ100A

更新时间： 2024-01-03 09:58:07

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	949K
描述
Trans Voltage Suppressor Diode, 8000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

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8.0SMDJ100A 数据手册

TVS Diodes

Surface Mount – 5000W > 5.0SMDJ series

8000W > 8.0SMDJ series

I-V Curve Characteristics

Uni-directional

Bi-directional

I^T

Vc VBR

^BRVc

Ipp

P_PPMPeak Pulse Power Dissipation -- Max power dissipation

V_RStand-off Voltage -- Maximum voltage that can be applied to theTVS without operation

V_BRBreakdown Voltage -- Maximum voltage that ﬂows though theTVS at a speciﬁed test current (I_T)

V_CClamping Voltage -- Peak voltage measured across theTVS at a speciﬁed I_PPM(peak impulse current)

I_RReverse Leakage Current -- Current measured at V_R

V_FForward Voltage Drop for Uni-directional

Ratings and Characteristic Curves (T_A=25°C unless otherwise noted)

Figure 1 -TVSTransients ClampingWaveform

Figure 2 - Peak Pulse Power Rating

1000

Voltage Transients

initial =T

amb

8kW at 10/1000µs, 25°C

Voltage Across TVS

100

Current Through TVS

0.001

0.01

0.1

t_d-Pulse Width (ms)

Time

continues on next page.

Speciﬁcations are subject to change without notice.

Revised: 06/10/19

1 234 5 6

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