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74HCT9114PW-T PDF预览

74HCT9114PW-T

更新时间: 2024-02-09 16:14:25
品牌 Logo 应用领域
恩智浦 - NXP 触发器
页数 文件大小 规格书
7页 50K
描述
IC HCT SERIES, 9 1-INPUT INVERT GATE, PDSO20, Gate

74HCT9114PW-T 技术参数

生命周期:Active包装说明:TSSOP,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.45系列:HCT
JESD-30 代码:R-PDSO-G20长度:6.5 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
功能数量:9输入次数:1
端子数量:20最高工作温度:125 °C
最低工作温度:-40 °C输出特性:OPEN-DRAIN
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd):47 ns认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:4.4 mmBase Number Matches:1

74HCT9114PW-T 数据手册

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Philips Semiconductors  
Product specification  
Nine wide Schmitt trigger buffer;  
open drain outputs; inverting  
74HC/HCT9114  
The Schmitt trigger action in the data inputs transform  
slowly changing input signals into sharply defined  
jitter-free output signals.  
FEATURES  
Schmitt trigger action on all data inputs  
Output capability: standard (open drain)  
ICC category: MSI  
The 74HC/HCT9114 have open-drain N-transistor  
outputs, which are not clamped by a diode connected to  
VCC. In the OFF-state, i.e. when one input is LOW, the  
output may be pulled to any voltage between GND and  
GENERAL DESCRIPTION  
V
Omax. This allows the device to be used as a  
The 74HC/HCT9114 are high-speed Si-gate CMOS  
devices and are pin compatible with low power Schottky  
TTL (LSTTL). They are specified in compliance with  
JEDEC standard no. 7A.  
LOW-to-HIGH or HIGH-to-LOW level shifter. For digital  
operation and OR-tied output applications, these devices  
must have a pull-up resistor to establish a logic HIGH level.  
The “9114” is identical to the “9115” but has inverting  
outputs.  
The 74HC/HCT9114 are nine wide Schmitt trigger  
inverting buffer with open drain outputs and Schmitt trigger  
inputs.  
QUICK REFERENCE DATA  
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns  
TYPICAL  
SYMBOL  
tPHL/ tPLZ  
PARAMETER  
CONDITIONS  
UNIT  
ns  
HC  
12  
HCT  
13  
propagation delay An to Yn  
input capacitance  
CL = 15 pF; VCC = 5 V  
CI  
3.5  
5
3.5  
5
pF  
pF  
CPD  
power dissipation capacitance per buffer  
notes 1 and 2  
Notes  
1. CPD is used to determine the dynamic power dissipation (PD in µW):  
PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:  
fi = input frequency in MHz  
fo = output frequency in MHz  
(CL × VCC2 × fo) = sum of outputs  
CL = output load capacitance in pF  
VCC = supply voltage in V  
2. For HC the condition is VI = GND to VCC  
For HCT the condition is VI = GND to VCC 1.5 V  
ORDERING INFORMATION  
See “74HC/HCT/HCU/HCMOS Logic Package Information”.  
December 1990  
2

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