Datasheet > 71V416YS10YI

71V416YS10YI

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
9页	104K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

71V416YS10YI 数据手册

IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

Commercial and Industrial Temperature Ranges

AbsoluteMaximumRatings⁽¹⁾

RecommendedOperating

TemperatureandSupply

Voltage

Symbol

Rating

Value

Unit

Supply Voltage Relative to

V^SS

Terminal Voltage Relative to

V^SS

V^DD

-0.5 to +4.6

-0.5 to V^DD+0.5

Grade

Commercial

Industrial

Temperature

0^OC to +70^OC

–40^OC to +85^OC

V^SS

V^DD

See Below

V^IN,V^OUT

T^BIAS

T^STG

P^T

Temperature Under Bias

Storage Temperature

Power Dissipation

-55 to +125

^oC

6442 tbl 05

-55 to +125

RecommendedDCOperating

Conditions

I^OUT

DC Output Current

6442 tbl 04

NOTE:

Symbol

Parameter

Supply Voltage

Ground

Min.

3.0

Typ.

Max.

3.6

Unit

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

V^DD

3.3

V^SS

(1)

____

V^DD+0.3

0.8

V^IH

V^IL

Input High Voltage

Input Low Voltage

2.0

(2)

____

-0.3

6442 tbl 06

NOTES:

1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.

2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.

Truth Table⁽¹⁾

I/O^0-I/O⁷

High-Z

I/O^8-I/O¹⁵

High-Z

BLE

BHE

Function

Deselected - Standby

Low Byte Read

High Byte Read

Word Read

DATA^OUT

High-Z

DATA^OUT

DATA^IN

High-Z

DATA^OUT

DATA^IN

High-Z

Word Write

Low Byte Write

High Byte Write

Outputs Disabled

DATA^IN

High-Z

6442 tbl 03

NOTE:

1. H = VIH, L = VIL, X = Don't care.

6.42

1 234 5 6 7...9

下载PDF

与71V416YS10YI相关器件

型号	品牌	描述	获取价格	数据表
71V416YS12BE	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	获取价格
71V416YS12BE8	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	获取价格
71V416YS12BEG	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48	获取价格
71V416YS12BEG1	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48	获取价格
71V416YS12BEG2	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48	获取价格
71V416YS12BEG3	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48	获取价格