Datasheet > 71V416YS10Y8

71V416YS10Y8

更新时间： 2022-12-01 20:14:49

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
9页	478K
描述
Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

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71V416YS10Y8 数据手册

IDT71V416YS, IDT71V416YL 3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

Commercial and Industrial Temperature Ranges

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)^(1,3)

tWC

ADDRESS

tAW

(2)

tAS

tCW

tBW

BHE, BLE

tWP

tWR

DATAOUT

DATAIN

tDH

DATAIN VALID

6442 drw 0

Timing Waveform of Write Cycle No. 3

(BHE, BLE Controlled Timing)^(1,3)

tWC

ADDRESS

tAW

(2)

tCW

tAS

tBW

BHE, BLE

tWP

tWR

DATAOUT

tDH

tDW

DATAIN

DATAIN VALID

6442 drw 1

NOTES:

1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.

2. During this period, I/O pins are in the output state, and input signals must not be applied.

3. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.

6.42

1...4 5 678 9

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与71V416YS10Y8相关器件

型号	品牌	描述	获取价格	数据表
71V416YS10YG	IDT	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44	获取价格
71V416YS10YGI	IDT	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44	获取价格
71V416YS10YI	IDT	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44	获取价格
71V416YS12BE	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	获取价格
71V416YS12BE8	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, BGA-48	获取价格
71V416YS12BEG	IDT	Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 9 X 9 MM, ROHS COMPLIANT, BGA-48	获取价格