生命周期: | Active | 包装说明: | BGA, |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最长访问时间: | 15 ns | 其他特性: | PIPELINED OR FLOW-THROUGH ARCHITECTURE |
JESD-30 代码: | S-PBGA-B324 | JESD-609代码: | e1 |
内存密度: | 9437184 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 72 | 功能数量: | 1 |
端子数量: | 324 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 128KX72 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
最大供电电压 (Vsup): | 2.6 V | 最小供电电压 (Vsup): | 2.4 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70T3799MS133BBI | IDT |
获取价格 |
Application Specific SRAM, 128KX72, 15ns, CMOS, PBGA324, 19 X 19 MM, 1.40 MM HEIGHT, 1.76 | |
70T3799MS166BB | IDT |
获取价格 |
Application Specific SRAM, 128KX72, 12ns, CMOS, PBGA324, 19 X 19 MM, 1.40 MM HEIGHT, 1.76 | |
70T3799MS166BBG | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3799MS166BBG8 | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3799MS166BBGI | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3799MS166BBGI8 | IDT |
获取价格 |
HIGH-SPEED SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T631 | RENESAS |
获取价格 |
256K x 18, 3.3V/2.5V Dual-Port RAM, Interleaved I/O's | |
70T631S10BCG | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM | |
70T631S10BCG8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM | |
70T631S10BCGI | IDT |
获取价格 |
Dual-Port SRAM, 256KX18, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 HEIGHT, 1 MM PITCH, GREEN, |