Datasheet > 6NM60-S

6NM60-S

更新时间： 2023-12-06 20:06:26

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友顺 - UTC		/
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N-CH

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6NM60-S 数据手册

6NM60-S

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous Drain Current

6.0

Pulsed Drain Current (Note 2)

Avalanche Current (Note 2)

Single Pulsed Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

I_DM

I_AR

1.4

E_AS

141

V/ns

dv/dt

4.5

TO-220F/TO-220F1

TO-251/TO-252

Power Dissipation

P_D

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°C

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 144 mH, I_AS= 1.4A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤ 6.0A, di/dt ≤ 200A/µs, V_DD≤ BV_DSS, Starting T_J= 25°C

THERMAL DATA

PARAMETER

TO-220F/TO-220F1

SYMBOL

RATING

62.5

UNIT

°C/W

Junction to Ambient

θ_JA

TO-251/TO-252

TO-220F/TO-220F1

TO-251/TO-252

110

3.13

Junction to Case

θ_JC

°C/W

2.27

UNISONIC TECHNOLOGIES CO., LTD

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QW-R205-294.b

www.unisonic.com.tw

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