Datasheet > 6N90-C

6N90-C

更新时间： 2023-12-06 20:01:33

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
9页	665K
描述
N-CH

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6N90-C 数据手册

6N90-C

Power MOSFET



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

900

V_DS=900V, V_GS=0V

V_GS=±30V, V_DS=0V

μA

I_GSS

±100 nA

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

3.0

5.0

2.3

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS=10V, I_D=3.0A

Ω

C_ISS

C_OSS

C_RSS

1000

110

Output Capacitance

V_DS=25V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

Gate-Source Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

7.2

6.2

V_DS=100V, V_GS=10V, I_D=6A

(Note 1, 2)

Gate-Drain Charge

Turn-On Delay Time (Note 1)

Turn-On Rise Time

V_DD=100V, V_GS=10V, I_D=6A,

R_G=25Ω (Note 1, 2)

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Continuous Drain-Source Diode

Forward Current

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Drain-Source Diode Forward Voltage (Note 1)

Body Diode Reverse Recovery Time (Note 1)

Body Diode Reverse Recovery Charge

V_SD

t_rr

I_S=6.0A, V_GS=0V

I_S=6.0A, V_GS=0V,

dI_F/dt=100A/µs

1.4

880

6.4

μC

Q_rr

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

4 of 9

QW-R205-470.E

www.unisonic.com.tw

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