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6N70-TC2 PDF预览

6N70-TC2

更新时间: 2023-12-06 20:02:27
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
9页 459K
描述
N-CH

6N70-TC2 数据手册

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6N70-TC2  
Power MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
VGSS  
ID  
RATINGS  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
700  
± 30  
V
Continuous  
6
A
Drain Current  
Pulsed (Note 2)  
Single Pulsed (Note 3)  
IDM  
12  
A
Avalanche Energy  
EAS  
50  
mJ  
V/ns  
W
Peak Diode Recovery dv/dt (Note 4)  
dv/dt  
3
35  
TO-220F/TO-220F1  
TO-251/TO-252  
Power Dissipation  
PD  
54  
W
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
°C  
°C  
TSTG  
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
2. Repetitive Rating: Pulse width limited by maximum junction temperature.  
3. L = 10mH, IAS = 3.3A, VDD = 50V, RG = 25 Starting TJ = 25°C  
4. ISD 6.0A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C  
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
62.5  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
TO-220F/TO-220F1  
TO-251/TO-252  
Junction to Ambient  
Junction to Case  
θJA  
110  
TO-220F/TO-220F1  
TO-251/TO-252  
3.57  
θJC  
2.31 (Note)  
Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 9  
QW-R205-516.A  
www.unisonic.com.tw  

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