Datasheet > 6N70-TC2

6N70-TC2

更新时间： 2023-12-06 20:02:27

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友顺 - UTC		/
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描述
N-CH

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数据手册

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6N70-TC2 数据手册

6N70-TC2

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

700

± 30

Continuous

Drain Current

Pulsed (Note 2)

Single Pulsed (Note 3)

I_DM

Avalanche Energy

E_AS

V/ns

Peak Diode Recovery dv/dt (Note 4)

dv/dt

TO-220F/TO-220F1

TO-251/TO-252

Power Dissipation

P_D

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

°C

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 10mH, I_AS= 3.3A, V_DD= 50V, R_G= 25 ꢀ Starting T_J= 25°C

4. I_SD≤ 6.0A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°C/W

TO-220F/TO-220F1

TO-251/TO-252

Junction to Ambient

Junction to Case

θ_JA

110

TO-220F/TO-220F1

TO-251/TO-252

3.57

θ_JC

2.31 (Note)

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

UNISONIC TECHNOLOGIES CO., LTD

3 of 9

QW-R205-516.A

www.unisonic.com.tw

1 234 5 6 7...9

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