Datasheet > 5962F9678501VPA

5962F9678501VPA

更新时间： 2024-01-20 14:20:32

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器
页数	文件大小	规格书
14页	61K
描述
BUFFER AMPLIFIER, CDIP8

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5962F9678501VPA 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	DIP, DIP8,.3
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.33.00.01
风险等级：	5.62	Is Samacsys：	N
放大器类型：	BUFFER	标称带宽 (3dB)：	225 MHz
25C 时的最大偏置电流 (IIB)：	25 µA	最大输入失调电压：	20000 µV
JESD-30 代码：	R-GDIP-T8	JESD-609代码：	e0
标称负供电电压 (Vsup)：	-5 V	功能数量：	1
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-55 °C	封装主体材料：	CERAMIC, GLASS-SEALED
封装代码：	DIP	封装等效代码：	DIP8,.3
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	+-5 V
认证状态：	Not Qualified	筛选级别：	MIL-PRF-38535 Class V
座面最大高度：	5.08 mm	标称压摆率：	1660 V/us
子类别：	Buffer Amplifiers	标称供电电压 (Vsup)：	5 V
表面贴装：	NO	技术：	BIPOLAR
温度等级：	MILITARY	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
总剂量：	300k Rad(Si) V	宽度：	7.62 mm
Base Number Matches：	1

5962F9678501VPA 数据手册

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML” or “Q” as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see

6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535

and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for

device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

SIZE

STANDARD

5962-96785

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

DSCC FORM 2234

APR 97

1 2 345 6 7...14

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与5962F9678501VPA相关器件

型号	品牌	描述	获取价格	数据表
5962F9678501VPC	ETC	Analog Buffer/Voltage Follower	获取价格
5962F9679901V9A	WEDC	IC 74 SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, UUC, DIE-14,	获取价格
5962F9679901VCC	ETC	Dual D-Type Flip-Flop	获取价格
5962F9679901VCX	RENESAS	74 SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CDIP14	获取价格
5962F9679901VXC	ETC	Dual D-Type Flip-Flop	获取价格
5962F9679901VXX	RENESAS	74 SERIES, DUAL POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, CDFP14	获取价格

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