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5962F9568902QEC PDF预览

5962F9568902QEC

更新时间: 2024-02-18 06:06:16
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
3页 68K
描述
Radiation Hardened 3.3V Quad Differential Line Receiver

5962F9568902QEC 技术参数

生命周期:Active包装说明:DFP,
Reach Compliance Code:unknown风险等级:5.72
差分输出:NO输入特性:DIFFERENTIAL SCHMITT TRIGGER
接口集成电路类型:LINE RECEIVER接口标准:EIA-422
JESD-30 代码:R-CDFP-F16功能数量:4
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK认证状态:Qualified
最大接收延迟:65 ns接收器位数:4
筛选级别:MIL-PRF-38535 Class V最大供电电压:3.6 V
最小供电电压:3 V标称供电电压:3.3 V
表面贴装:YES温度等级:MILITARY
端子形式:FLAT端子位置:DUAL
总剂量:300k Rad(Si) V

5962F9568902QEC 数据手册

 浏览型号5962F9568902QEC的Datasheet PDF文件第1页浏览型号5962F9568902QEC的Datasheet PDF文件第3页 
HS-26CLV32RH  
Die Characteristics  
DIE DIMENSIONS:  
Metallization:  
84 mils x 130 mils x 21 mils  
Bottom: Mo/Tiw  
(2140µm x 3290µm)  
Thickness: 5800Å ±1kÅ  
Top: Al/Si/Cu  
Thickness: 10kÅ ±1kÅ  
INTERFACE MATERIALS:  
Glassivation:  
Worst Case Current Density:  
Type: PSG (Phosphorus Silicon Glass)  
Thickness: 8kÅ ± 1kÅ  
5
2
<2.0 x 10 A/cm  
Bond Pad Size:  
Substrate:  
110µm x 100µm  
AVLSI1RA, Silicon backside, V  
DD  
backside potential  
Metallization Mask Layout  
HS-26CLV32RH  
AIN  
(1)  
V
(16)  
BIN  
(15)  
DD  
(14) B  
IN  
AIN (2)  
(13) B  
OUT  
A
(3)  
OUT  
ENAB (4)  
(12) ENAB  
(11) D  
OUT  
C
(5)  
(6)  
OUT  
(10) D  
IN  
C
IN  
(7)  
(8)  
(9)  
GND  
CIN  
DIN  
2

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