Datasheet > 5962F9563005VYC

5962F9563005VYC

更新时间： 2022-05-17 01:23:33

品牌	Logo	应用领域
英特矽尔 - INTERSIL		复用器
页数	文件大小	规格书
7页	415K
描述
Rad-Hard 16 Channel BiCMOS Analog Multiplexer with High-Z Analog Input Protection

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5962F9563005VYC 数据手册

HS-1840ARH, HS-1840AEH, HS-1840BRH, HS-1840BEH

Die Characteristics

DIE DIMENSIONS:

ASSEMBLY RELATED INFORMATION:

(2820µmx4080µm x 483µm ±25.4μm)

111 milsx161 milsx19 mils ±1 mil

Substrate Potential:

Unbiased (DI)

INTERFACE MATERIALS:

Glassivation:

ADDITIONAL INFORMATION:

Worst Case Current Density:

Type: PSG (Phosphorus Silicon Glass)

Thickness: 8.0kÅ ±1kÅ

Modified SEM

Transistor Count:

Top Metallization:

407

Type: AlSiCu

Thickness: 16.0kÅ ±2kÅ

Process:

Radiation Hardened Silicon Gate,

DI Wafer, Dielectric Isolation

Backside Finish:

Silicon

Metallization Mask Layout

HS-1840ARH, HS-1840BRH

IN8

ENABLE

-V

OUT

REF

IN16

GND

FN4355.5

April 6, 2012

1 2 3 456 7

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