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5962-9459301VHA PDF预览

5962-9459301VHA

更新时间: 2024-01-14 08:40:10
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
11页 97K
描述
IC OP-AMP, 5500 uV OFFSET-MAX, CDFP10, FP-10, Operational Amplifier

5962-9459301VHA 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:10
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.56
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
标称共模抑制比:47 dB最大输入失调电压:5500 µV
JESD-30 代码:R-GDFP-F10JESD-609代码:e0
负供电电压上限:-6.3 V标称负供电电压 (Vsup):-5 V
功能数量:1端子数量:10
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
筛选级别:MIL-PRF-38535 Class V子类别:Operational Amplifier
供电电压上限:6.3 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

5962-9459301VHA 数据手册

 浏览型号5962-9459301VHA的Datasheet PDF文件第3页浏览型号5962-9459301VHA的Datasheet PDF文件第4页浏览型号5962-9459301VHA的Datasheet PDF文件第5页浏览型号5962-9459301VHA的Datasheet PDF文件第7页浏览型号5962-9459301VHA的Datasheet PDF文件第8页浏览型号5962-9459301VHA的Datasheet PDF文件第9页 
TABLE I. Electrical performance characteristics – Continued.  
Conditions 1/ 2/ 3/  
-55°C T +125°C  
unless otherwise specified  
Test  
Symbol  
Group A  
subgroups  
Device  
type  
Limits  
Max  
Unit  
A
Min  
350  
Dynamic performance section  
Small signal bandwidth  
4/ 5/  
SSBW  
4
All  
MHz  
-3 dB, G = +2, R = 750 ,  
F
peaking < 0.1 dB,  
T = +25°C  
A
650  
-3 dB, G = +1, R = 1 k,  
F
peaking < 1 dB,  
T = +25°C  
A
Bandwidth for 0.1 dB  
flatness  
BW  
SR  
4
4
All  
All  
85  
MHz  
G = +2, R = 750 ,  
F
4/ 5/  
T = +25°C  
A
Slew rate  
4/ 5/  
800  
960  
V/µs  
G = +2, V  
OUT  
= 2 V step,  
= 2 V step,  
T = +25°C  
A
G = -1, V  
OUT  
T = +25°C  
A
Noise and harmonic performance section  
Differential gain error 4/ 5/ DGE  
4
4
All  
All  
0.025  
0.04  
%
G = +2, R = 150 ,  
L
T = +25°C  
A
Differential phase error 4/ 5/ DPE  
Degree  
G = +2, R = 150 ,  
L
T = +25°C  
A
1/ Device type 01 supplied to this drawing has been characterized through all levels M, D, P, L, R of irradiation. Device type  
02 supplied to this drawing has been characterized at levels L and R of irradiation. However, device type 01 is only tested  
at the “R” level and device type 02 is only tested at the “L” level. Pre and Post irradiation values are identical unless  
otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, T = +25°C.  
A
2/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.  
Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,  
method 1019, condition A.  
For device type 02, radiation end point limits for the noted parameters are guaranteed for the conditions specified in  
MIL-STD-883, method 1019, condition D.  
3/ Unless otherwise specified, V = ±5 V and R = 100 .  
S
L
4/ Not tested post irradiation.  
5/ Parameter is guaranteed by engineering characterization, no production tested. Characterization is repeated after major  
design or process changes.  
SIZE  
STANDARD  
5962-94593  
A
MICROCIRCUIT DRAWING  
DLA LAND AND MARITIME  
REVISION LEVEL  
E
SHEET  
COLUMBUS, OHIO 43218-3990  
6
DSCC FORM 2234  
APR 97  

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