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5962-9081201MGA PDF预览

5962-9081201MGA

更新时间: 2024-02-14 03:21:21
品牌 Logo 应用领域
德州仪器 - TI 放大器
页数 文件大小 规格书
13页 339K
描述
BUFFER AMPLIFIER, MBCY8, METAL CAN-8

5962-9081201MGA 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:, CAN8,.2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5放大器类型:BUFFER
最大平均偏置电流 (IIB):7 µA标称带宽 (3dB):50 MHz
25C 时的最大偏置电流 (IIB):4 µA最大输入失调电压:50000 µV
JESD-30 代码:O-MBCY-W8JESD-609代码:e0
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:METAL封装等效代码:CAN8,.2
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified筛选级别:MIL-STD-883
最小摆率:250 V/us标称压摆率:1200 V/us
子类别:Buffer Amplifiers最大压摆率:20 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:NO技术:BIPOLAR
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb) - hot dipped
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5962-9081201MGA 数据手册

 浏览型号5962-9081201MGA的Datasheet PDF文件第3页浏览型号5962-9081201MGA的Datasheet PDF文件第4页浏览型号5962-9081201MGA的Datasheet PDF文件第5页浏览型号5962-9081201MGA的Datasheet PDF文件第7页浏览型号5962-9081201MGA的Datasheet PDF文件第8页浏览型号5962-9081201MGA的Datasheet PDF文件第9页 
than 100 k, a large input-to-output voltage may be present.  
R1 and R2 then form voltage divider, keeping the  
Application Hints  
a
input-output differential below the 7V Maximum Rating for in-  
put voltages up to 14V. This protection network should be  
sufficient to protect the LM6121 from the output of nearly any  
POWER SUPPLY DECOUPLING  
The method of supply bypassing is not critical for stability of  
the LM6121 series buffers. However, their high current out-  
put combined with high slew rate can result in significant  
voltage transients on the power supply lines if much induc-  
tance is present. For example, a slew rate of 900 V/µs into a  
50load produces a di/dt of 18 A/µs. Multiplying this by a  
wiring inductance of 50 nH (which corresponds to approxi-  
±
op amp which is operated on supply voltages of 15V or  
lower.  
mately 11⁄  
" of 22 gauge wire) result in a 0.9V transient. To  
2
minimize this problem use high quality decoupling very close  
to the device. Suggested values are a 0.1 µF ceramic in par-  
allel with one or two 2.2 µF tantalums. A ground plane is rec-  
ommended.  
DS009223-6  
LOAD IMPEDANCE  
FIGURE 1. LM6121 with Overvoltage Protection  
The LM6121 is stable to any load when driven by a 50Ω  
source. As shown in the Overshoot vs Capacitive Load  
Application Hints  
graph, worst case is  
a purely capacitive load of about  
1000 pF. Shunting the load capacitance with a resistor will  
reduce overshoot.  
HEATSINK REQUIREMENTS  
A heatsink may be required with the LM6321 depending on  
the maximum power dissipation and maximum ambient tem-  
perature of the application. Under all possible operating con-  
ditions, the junction temperature must be within the range  
specified under Absolute Maximum Ratings.  
SOURCE INDUCTANCE  
Like any high frequency buffer, the LM6121 can oscillate at  
high values of source inductance. The worst case condition  
occurs at a purely capacitive load of 50 pF where up to  
100 nH of source inductance can be tolerated. With a 50Ω  
load, this goes up to 200 nH. This sensitivity may be reduced  
at the expense of a slight reduction in bandwidth by adding a  
resistor in series with the buffer input. A 100resistor will en-  
sure stability with source inductances up to 400 nH with any  
load.  
To determine if a heatsink is required, the maximum power  
dissipated by the buffer, P(max), must be calculated. The for-  
mula for calculating the maximum allowable power dissipa-  
=
tion in any application is PD  
(TJ(max)−TA)/θJA. For the  
simple case of a buffer driving a resistive load as in Figure 2,  
the maximum DC power dissipation occurs when the output  
is at half the supply. Assuming equal supplies, the formula is  
PD IS (2V+) + V+2/2 RL.  
=
OVERVOLTAGE PROTECTION  
The LM6121 may be severely damaged or destroyed if the  
Absolute Maximum Rating of 7V between input and output  
pins is exceeded.  
If the buffer’s input-to-output differential voltage is allowed to  
exceed 7V,  
a
base-emitter junction will be in  
reverse-breakdown, and will be in series with  
a
forward-biased base-emitter junction. Referring to the  
LM6121 simplified schematic, the transistors involved are  
Q1 and Q3 for positive inputs, and Q2 and Q4 for negative  
inputs. If any current is allowed to flow through these junc-  
tions, localized heating of the reverse-biased junction will oc-  
cur, potentially causing damage. The effect of the damage is  
typically increased offset voltage, increased bias current,  
and/or degraded AC performance. Furthermore, this will de-  
feat the short-circuit and over-temperature protection cir-  
DS009223-8  
FIGURE 2.  
The next parameter which must be calculated is the maxi-  
mum allowable temperature rise, TR(max). This is calculated  
by using the formula:  
±
cuitry. Exceeding 7V input with a shorted output will de-  
=
TR(max) TJ(max) − TA(max)  
stroy the device.  
where: TJ(max) is the maximum allowable junction tem-  
perature  
The device is best protected by the insertion of the parallel  
combination of a 100 kresistor (R1) and a small capacitor  
(C1) in series with the buffer input, and a 100 kresistor  
(R2) from input to output of the buffer (see Figure 1). This  
network normally has no effect on the buffer output. How-  
ever, if the buffer’s current limit or shutdown is activated, and  
the output has a ground-referred load of significantly less  
TA(max) is the maximum ambient temperature  
Using the calculated values for TR(max) and P(max), the re-  
quired value for junction-to-ambient thermal resistance,  
θ(J–A), can now be found:  
=
θ(J–A) TR(max)/P(max)  
www.national.com  
6

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