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5962-8949703MZA PDF预览

5962-8949703MZA

更新时间: 2023-01-03 04:34:38
品牌 Logo 应用领域
MICROSS 动态存储器
页数 文件大小 规格书
58页 4989K
描述
Video DRAM, 256KX4, 120ns, CMOS,

5962-8949703MZA 数据手册

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VRAM  
SMJ44C251B  
MT42C4256  
DESCRIPTION  
The SMJ44C251B/MT42C4256 multiport video RAM is a  
high-speed, dual-ported memory device. It consists of a dynamic  
random-access memory (DRAM) organized as 262144 words  
of 4 bits each interfaced to a serial-data register or serial-access  
memory (SAM) organized as 512 words of 4 bits each. The  
SMJ44C251B/MT42C4256 supports three types of operation:  
random access to and from the DRAM, serial access to and from  
the serial register, and bidirectional transfer of data between any  
row in the DRAM and the serial register. Except during transfer  
operations, the SMJ44C251B/MT42C4256 can be accessed  
simultaneously and asynchronously from the DRAM and SAM  
ports.  
applications not requiring real-time register reload (for example,  
reloads done during CRT retrace periods), the single-register  
mode of operation is retained to simplify design. The SAM can  
also be congured in input mode, accepting serial data from an  
external device. Once the serial register within the SAM is loaded,  
its contents can be transferred to the corresponding column posi-  
tions in any row in memory in a single memory cycle.  
The SAM port is designed for maximum performance. Data  
can be input to or accessed from the SAM at serial rates up to  
33 MHz. During the split-register mode of operation, internal  
circuitry detects when the last bit position is accessed from the  
active half of the register and immediately transfers control to the  
During a transfer operation, the 512 columns of the DRAM  
are connected to the 512 positions in the serial data register. The  
512 × 4-bit serial-data register can be loaded from the memory  
row (transfer read), or the contents of the 512 × 4-bit serial-data  
register can be written to the memory row (transfer write).  
The SMJ44C251B/MT42C4256 is equipped with several  
features designed to provide higher system-level bandwidth and  
to simplify design integration on both the DRAM and SAM ports.  
On the DRAM port, greater pixel draw rates can be achieved  
by the device’s 4 × 4 block-write mode. The block-write mode  
allows four bits of data (present in an on-chip color-data register)  
to be written to any combination of four adjacent column-address  
locations. As many as 16 bits of data can be written to memory  
during each CAS cycle time. Also on the DRAM port, a write  
mask or a write-per-bit feature allows masking any combina-  
tion of the four input/outputs on any write cycle. The persistent  
write-per-bit feature uses a mask register that, once loaded, can  
be used on subsequent write cycles. The mask register eliminates  
having to provide mask data on every mask-write cycle.  
The SMJ44C251B/MT42C4256 offers a split-register  
transfer read (DRAM to SAM) feature for the serial tester  
(SAM port). This feature enables real-time register reload  
implementation for truly continuous serial data streams without  
critical timing requirements. The register is divided into a high  
half and a low half. While one half is being read out of the SAM  
port, the other half can be loaded from the memory array. For  
opposite half. A separate output, QSF, is included to  
dicate which half of the serial register is active at any given time  
in the split-register mode.  
in-  
All inputs, outputs, and clock signals on the SMJ44C251B/  
MT42C4256 are compatible with Series 54 TTL devices. All  
address lines and data-in lines are latched on-chip to simplify  
system design. All data-out lines are unlatched to allow greater  
system exibility.  
Enhanced page-mode operation allows faster memory ac-  
cess by keeping the same row address while selecting random  
column addresses. The time for row-address setup, row-address  
hold, and address multiplex is eliminated, and a memory cycle  
time reduction of up to 3× can be achieved, compared to mini-  
mum RAS cycle times. The maximum number of columns that  
can be accessed is determined by the maximum RAS low time  
and page-mode cycle time used. The SMJ44C251B/MT42C4256  
allows a full page (512 cycles) of  
information to be accessed in  
read, write, or read-modify-write mode during a single RAS-low  
period using relatively conservative page-mode cycle times.  
The SMJ44C251B/MT42C4256 employs state-of-the-art  
technology for very high performance combined with improved  
reliability.  
Micross Components reserves the right to change products or specications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.6 06/10  
2

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