82C86H
Absolute Maximum Ratings
Thermal Information
o
o
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V Thermal Resistance (Typical)
θJA ( C/W) θJC ( C/W)
Input, Output or I/O Voltage . . . . . . . . . . . .GND -0.5V to V +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CC
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
PLCC Package . . . . . . . . . . . . . . . . . .
Maximum Storage Temperature Range . . . . . . . . .-65 C to +150 C
Maximum Junction Temperature Hermetic Package. . . . . . . +175 C
Maximum Junction Temperature Plastic Package. . . . . . . . . +150 C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300 C
(PLCC - Lead Tips Only)
70
80
75
75
16
20
N/A
N/A
Operating Conditions
o
o
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
o
o
o
o
C82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0 C to +70 C
o
o
o
I82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 C to +85 C
o
o
M82C86H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
o
DC Electrical Specifications V = 5.0V ± 10%; T = 0 C to +70 C (C82C86H);
CC
A
o
o
T = -40 C to +85 C (I82C86H);
T = -55 C to +125 C (M82C86H)
A
o
o
A
SYMBOL
PARAMETER
Logical One
MIN
2.0
2.2
-
MAX
UNITS
TEST CONDITIONS
C82C86H, I82C86H
M82C86H (Note 1)
V
-
V
V
V
IH
Input Voltage
V
Logical Zero Input Voltage
Logical One Output Voltage
B Outputs
0.8
IL
V
OH
3.0
3.0
V
V
V
I
I
I
= -8mA
= -4mA
= -100µA
OH
OH
OH
A Outputs
A or B Outputs
V
-0.4
CC
V
Logical Zero Output Voltage
B Outputs
OL
0.45
0.45
10.0
10.0
V
V
I
I
= 20mA
= 12mA
OL
A Outputs
OL
I
Input Leakage Current
Output Leakage Current
-10.0
-10.0
µA
µA
V
= GND or V DIP Pins 9, 11
IN CC
I
IO
VO = GND or V , OE ≥ V -0.5V
CC CC
DIP Pins 1 - 8, 12 - 19
ICCSB
ICCOP
Standby Power Supply
Current
-
-
10
1
µA
V
= V or GND, V = 5.5V, Outputs Open
IN
CC
CC
o
Operating Power Supply
Current
mA/MHz
T = +25 C, Typical (See Note 2)
A
NOTES:
1. V is measured by applying a pulse of magnitude = V
to one data input at a time and checking the corresponding device output for
IH(MIN)
IH
a valid logical “1” during valid input high time. Control pins (T, OE) are tested separately with all device data input pins at V -0.4
CC
2. Typical ICCOP = 1mA/MHz of read/ cycle time. (Example: 1.0µs read/write cycle time = 1mA).
o
Capacitance T = +25 C
A
SYMBOL
PARAMETER
Input Capacitance
TYPICAL
UNITS
TEST CONDITIONS
CIN
B Inputs
A Inputs
18
14
pF
pF
Freq = 1MHz, all measurements are
referenced to device GND
4-320