Datasheet > 5962-3826716QUX

5962-3826716QUX

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
MICROSS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
19页	329K
描述
EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32

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5962-3826716QUX 数据手册

EEPROM

AS58C1001

Austin Semiconductor, Inc.

128K x 8 EEPROM

EEPROM Memory

AVAILABLE AS MILITARY

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F & SF)

SPECIFICATIONS

l SMD 5962-38267

l MIL-STD-883

RDY/BUSY\

A16

A14

A12

32 Vcc

31 A15

30 RES\

29 WE\

28 A13

27 A8

FEATURES

l High speed: 150, 200, and 250ns

l Data Retention: 10 Years

l Low power dissipation, active current (20mW/MHz (TYP)),

standby current (100µW(MAX))

l Single +5V (+10%) power supply

l Data Polling and Ready/Busy Signals

l Erase/Write Endurance (10,000 cycles in a page mode)

l Software Data protection Algorithm

l Data Protection Circuitry during power on/off

l Hardware Data Protection with RES pin

l Automatic Programming:

I/O 0

I/O 1

I/O 2

Vss

26 A9

25 A11

24 OE\

23 A10

22 CE\

21 I/O 7

20 I/O 6

19 I/O 5

18 I/O 4

17 I/O 3

32-Pin LCC (ECA)

Automatic Page Write: 10ms (MAX)

128 Byte page size

OPTIONS

l Timing

MARKINGS

3 2 1 31 32 30

150ns access

200ns access

250ns access

-15

-20

-25

29 WE\

28 A13

27 A8

26 A9

l Packages

25 A11

24 OE\

23 A10

22 CE\

21 I/O 7

Ceramic LCC

Ceramic Flat Pack

Radiation Shielded Ceramic FP*

l Operating Temperature Ranges

-Military (-55^oC to +125^oC)

-Industrial (-40^oC to +85^oC)

ECA No. 208

No. 306

A2 10

A1 11

A0 12

SF No. 305

I/O 0 13

14 15 16 17 18 19 20

*NOTE: Package lid is connected to ground (Vss).

This EEPROM provides several levels of data protection. Hard-

ware data protection is provided with the RES pin, in addition to noise

protection on the WE signal and write inhibit during power on and off.

Software data protection is implemented using JEDEC Optional Stan-

dard algorithm.

The AS58C1001 is designed for high reliability in the most de-

manding applications. Data retention is specified for 10 years and

erase/write endurance is guaranteed to a minimum of 10,000 cycles in

the Page Mode.

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS58C1001 is capable or in

system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consump-

tion, and a high level of reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology and

CMOS process and circuitry technology.

This device has a 128-Byte Page Programming function to make its

erase and write operations faster. The AS58C1001 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS58C1001

Rev. 2.5 6/00

12 3 4 5 6 7...19

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与5962-3826716QUX相关器件

型号	品牌	获取价格	描述	数据表
5962-3826716QWM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QWQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QWV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QXM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QXQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QXV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QZM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QZQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716QZV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826716V6C	MAXWELL	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS,

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