Datasheet > 5962-1124201QFA

5962-1124201QFA

更新时间： 2023-06-19 15:21:09

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德州仪器 - TI		/
页数	文件大小	规格书
17页	298K
描述
QML class Q 2×2 1-Gbps LVDS crosspoint switch \| W \| 16 \| -55 to 125

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5962-1124201QFA 数据手册

SN55LVCP22-SP

SLLSE43 –JUNE 2012

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

Table 1. PACKAGE/ORDERING INFORMATION⁽¹⁾

TEMPERATURE

PACKAGE⁽²⁾

ORDERABLE PART NUMBER

TOP-SIDE MARKING

5962-1124201VFA

LVCP22W-SP

SN55LVCP22W/EM⁽²⁾

EVAL ONLY

–55°C to 125°C T_case

5962-1124201VFA

16 / W

25°C

SN55LVCP22WMPR

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

website at www.ti.com.

(2) These units are intended for engineering evaluation only. They are processed to a non-compliant flow (e.g. No Burn-In, etc.) and are

tested to a temperature rating of 25°C only. These units are not suitable for qualification, production, radiation testing or flight use. Parts

are not warranted for performance over the full MIL specified temperature range of -55°C to 125°C or operating life.

THERMAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUE

82.5

7.5

UNITS

°C/W

θ_JA

θ_JC

Junction-to-ambient thermal resistance

Junction-to-case thermal resistance

Typical

V_CC= 3.3 V, T_A= 25°C, 1 Gbps

V_CC= 3.6 V, T_A= 125°C, 1 Gbps

198

P_D

Device power dissipation

Maximum

313

10000

1000

100

Electromigration Fail Mode

0.1

100

110

120

Continuous T_J(°C)

A. See datasheet for absolute maximum and minimum recommended operating conditions.

130

140

150

160

170

180

B. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect

life).

C. The predicted operating lifetime vs. junction temperature is based on reliability modeling using electromigration as the

dominant failure mechanism affecting device wearout for the specific device process and design characteristics.

Figure 1. SN55LVCP22-SP Operating Life Derating Chart

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