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530EB622M080BGR

更新时间： 2024-02-12 07:56:44

品牌	Logo	应用领域
芯科 - SILICON		振荡器晶体振荡器石英晶振
页数	文件大小	规格书
10页	184K
描述
CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ)

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530EB622M080BGR 数据手册

Si530/531

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Symbol

Test Condition

3.3 V option

Min

2.97

2.25

1.71

—

Typ

3.3

2.5

1.8

Max

3.63

2.75

1.89

—

Units

Supply Voltage

2.5 V option

1.8 V option

Supply Current

Output enabled

TriState mode

—

Output Enable (OE)

0.75 x V

—

0.5

Operating Temperature Range

–40

—

ºC

Notes:

1. Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 6 for further details.

2. OE pin includes a 17 kΩ pullup resistor to V_DD. Pulling OE to ground causes outputs to tristate.

Table 2. CLK± Output Frequency Characteristics

Parameter

Symbol

Test Condition

LVPECL/LVDS/CML

CMOS

Min

Typ

—

Max

945

160

Units

Nominal Frequency^1,2

MHz

—

Initial Accuracy

Measured at +25 °C at

time of shipping

f_i

—

±1.5

—

ppm

∆f/f

–20

–50

—

+20

+50

Temperature Stability^1,3

Aging

Frequency drift over

projected 15 year life

f_a

—

±10

ppm

Powerup Time⁴

t_OSC

Notes:

1. See Section 3. "Ordering Information" on page 6 for further details.

2. Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.

3. Selectable parameter specified by part number.

4. Time from powerup or tristate mode to f_O.

Preliminary Rev. 0.4

123 4 5 6 7...10

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