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50MT060ULST PDF预览

50MT060ULST

更新时间: 2024-02-27 15:10:26
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制瞄准线双极性晶体管斩波器局域网
页数 文件大小 规格书
10页 201K
描述
LOW SIDE CHOPPER IGBT MTP

50MT060ULST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X13
针数:13Reach Compliance Code:compliant
风险等级:5.1Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):114 A
集电极-发射极最大电压:600 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X13元件数量:2
端子数量:13封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:40晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

50MT060ULST 数据手册

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I27123 rev. C 02/03  
50MT060ULS  
"LOW SIDE CHOPPER" IGBT MTP  
Ultrafast Speed IGBT  
Features  
• Gen. 4 Ultrafast Speed IGBT Technology  
• HEXFRED TM Diode with UltraSoft  
Reverse Recovery  
• Very Low Conduction and Switching  
Losses  
• Optional SMT Thermistor (NTC)  
• Aluminum Nitride DBC  
VCES = 600V  
IC = 100A,  
TC = 25°C  
• Very Low Stray Inductance Design for  
High Speed Operation  
• UL approved ( file E78996 )  
Benefits  
• Optimized for Welding, UPS and SMPS  
Applications  
• Operating Frequencies > 20 kHz Hard  
Switching, >200 kHz Resonant Mode  
• Low EMI, requires Less Snubbing  
• Direct Mounting to Heatsink  
• PCB Solderable Terminals  
• Very Low Junction-to-Case Thermal  
Resistance  
MMTP  
Absolute Maximum Ratings  
Parameters  
Max  
Units  
VCES  
IC  
Collector-to-Emitter Voltage  
Continuos Collector Current  
600  
100  
50  
V
A
@ TC = 25°C  
@ TC = 122°C  
ICM  
ILM  
Pulsed Collector Current  
200  
200  
48  
Peak Switching Current  
I F  
Diode Continuous Forward Current  
Peak Diode Forward Current  
Gate-to-Emitter Voltage  
@ TC = 100°C  
IFM  
VGE  
VISOL  
PD  
200  
± 20  
2500  
445  
175  
205  
83  
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min  
Maximum Power  
Dissipation  
IGBT  
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
@ TC = 100°C  
W
Diode  
www.irf.com  
1

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