Datasheet > 5.0SMDJ33A-T7

5.0SMDJ33A-T7

更新时间： 2024-01-20 11:06:31

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管
页数	文件大小	规格书
6页	1040K
描述
Trans Voltage Suppressor Diode, 5000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

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技术参数
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5.0SMDJ33A-T7 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-J2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.43
Is Samacsys：	N	其他特性：	EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：	40.6 V	最小击穿电压：	36.7 V
击穿电压标称值：	38.65 V	最大钳位电压：	53.3 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-J2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	5000 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	6.5 W
参考标准：	IEC-61000-4-2; IEC-61000-4-4	最大重复峰值反向电压：	33 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	J BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

5.0SMDJ33A-T7 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 5000W > 5.0SMDJ series

Pb e3

RoHS

5.0SMDJ Series

Description

Uni-directional

The 5.0SMDJ series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Bi-directional

Features

• 5000W peak pulse power • Excellent clamping

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

capability

• Low incremental surge

resistance

• For surface mounted

applications to optimize

board space

• Typical I_Rless than 5μA

when V_BRmin>22V

• High temperature

to reﬂow soldering

Agency Approvals

• Low proﬁle package

AGENCY

AGENCY FILE NUMBER

E230531

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

guaranteed: 260°C/40sec

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Plastic package is

ﬂammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

ﬁnish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

P_PPM

Value

5000

Unit

Peak Pulse Power Dissipation at

T_L=25^OC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2)

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

• Built-in strain relief

• Glass passivated chip

junction

Power Dissipation on Inﬁnite Heat

Sink atT_L=50^OC

P_D

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

300

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only

V_F

5.0

OperatingTemperature Range

T_J

-65 to 150

-65 to 175

°C

StorageTemperature Range

T_STG

• Fast response time:

typically less than 1.0ps

from 0V to BV min

TypicalThermal Resistance Junction

to Lead

°C/W

R_θJL

R_θJA

TypicalThermal Resistance Junction

to Ambient

°C/W

Applications

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated aboveT_J(initial) =25^OC per Fig. 3.

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only,duty cycle=4 per minute maximum.

Computer, Industrial and Consumer electronic

applications.

Additional Infomarion

Functional Diagram

Bi-directional

Datasheet

Samples

Resources

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 11/20/15

12 3 4 5 6

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