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5.0SMDJ14A PDF预览

5.0SMDJ14A

更新时间: 2024-01-27 17:31:55
品牌 Logo 应用领域
林朋 - ANOVA 局域网光电二极管
页数 文件大小 规格书
4页 289K
描述
Surface Mount Transient Voltage Suppressors

5.0SMDJ14A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
Factory Lead Time:14 weeks风险等级:1.65
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/1651843.2.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=1651843
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=16518433D View:https://componentsearchengine.com/viewer/3D.php?partID=1651843
Samacsys PartID:1651843Samacsys Image:https://componentsearchengine.com/Images/9/5.0SMDJ14A.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/5.0SMDJ14A.jpgSamacsys Pin Count:2
Samacsys Part Category:TVS Diode (Uni-directional)Samacsys Package Category:Diodes Moulded
Samacsys Footprint Name:5.0SMDJ14A-1Samacsys Released Date:2018-12-10 12:45:33
Is Samacsys:N其他特性:PRSM-MIN
最大击穿电压:17.2 V最小击穿电压:15.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2湿度敏感等级:1
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:6.5 W最大重复峰值反向电压:14 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5.0SMDJ14A 数据手册

 浏览型号5.0SMDJ14A的Datasheet PDF文件第2页浏览型号5.0SMDJ14A的Datasheet PDF文件第3页浏览型号5.0SMDJ14A的Datasheet PDF文件第4页 
5.0SMDJ Series  
Working Voltage: 11 to 440 V  
Peak Pulse Power: 5000 W  
Surface Mount  
Transient Voltage Suppressors  
SMC/ DO-214AB  
Features  
Glass passivated chip  
5000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
5000  
Unit  
W
Parameter  
Symbol  
PPP  
Peak power dissipation with a 10/1000μs waveform(1)  
Peak pulse current with a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
IPP  
PD  
See Next Table  
6.5  
A
W
Peak forward surge current, 8.3 ms single half sine-  
wave unidirectional only(2)  
IFSM  
300  
A
Maximum instantaneous forward voltage at 100 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
TJ, TSTG  
Operating junction and storage temperature range  
- 55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
www.anova-semi.com  
Revision: G  
P. 1  
Sep-08 -2015  

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