4N39
Photo SCR Optocoupler
FEATURES
• Turn On Current (I ), 5.0 mA Typical
Dimensions in Inches (mm)
FT
• Gate Trigger Current (I ), 20 mA
• Surge Anode Current, 10 Amp
GT
pin one ID
Anode
2
1
3
1
2
3
6
5
4
Gate
• Blocking Voltage, 200 V
ACPK
.248 (6.30)
.256 (6.50)
• Gate Trigger Voltage (V ), 0.6 Volt
GT
Cathode
NC
Anode
Cathode
• Isolation Voltage, 5300 V
• Solid State Reliability
• Standard DIP Package
RMS
4
5
6
.335 (8.50)
.343 (8.70)
• Underwriters Lab File #E52744
VE
D
•
VDE Approval #0884 Available with
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
Option 1
.130 (3.30)
.150 (3.81)
DESCRIPTION
18°
4°
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be
used in SCR triac and solid state relay applica-
tions where high blocking voltages and low input
current sensitivity are required.
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.300–.347
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.100 (2.54) typ.
(7.62–8.81)
Characteristics T =25°C
A
Parameters
Sym.
Min. Typ. Max. Unit
Condition
Maximum Ratings
Emitter
Emitter
Peak Reverse Voltage .................................... 6.0 V
Peak Forward Current
Forward Voltage
Reverse Current
Detector
—
—
1.2
—
1.5
10
V
I =20 mA
V
I
F
F
µA
V =5.0 V
R
R
(100 µs, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C......................... 100 mW
Derate Linearly from 50°C..................... 2.0 mW/°C
Detector
Reverse Gate Voltage..................................... 6.0 V
Anode Peak Blocking Voltage ...................... 200 V
Peak Reverse Gate Voltage............................ 6.0 V
Anode Current............................................ 300 mA
Surge Anode Current (100 µs duration).......... 10 A
Surge Gate Current (5.0 ms duration)........ 100 mA
Power Dissipation, 25°C ambient.............. 400 mW
Derate Linearly from 25°C..................... 8.0 mW/°C
Package
Forward Blocking
Voltage
V
V
200
200
—
—
—
—
V
V
R
=10 kΩ
DM
GK
T =100°C
A
I =150 µA
Reverse Blocking
Voltage
d
RM
On-state Voltage
Holding Current
V
I
—
—
—
—
1.2
V
I
=300 mA
TM
TM
200
µA
R
V
=27 kΩ
GK
FX
H
=50 V
Gate Trigger
Voltage
—
—
0.6
—
1.0
50
V
V
R
=100 V
GK
V
FX
GT
=27 kΩ
R =10 KΩ
L
Forward Leakage
Current
µA
R
=10 kΩ
GK
I
DM
RM
V
=200 V
RX
Isolation Test Voltage (1.0 sec.)............. 5300 V
I =0,
RMS
F
T =100°C
Isolation Resistance
A
12
V =500 V, T =25°C................................≥10
Ω
Ω
Reverse Leakage
Current
—
—
50
µA
R
=27 kΩ
I
IO
A
GK
11
V
=200 V
V =500 V, T =100°C..............................≥10
RX
IO
A
I =0,
Total Package Dissipation ......................... 450 mW
Derate Linearly from 50°C..................... 9.0 mW/°C
Operating Temperature ............... –55°C to +100°C
Storage Temperature................... –55°C to +150°C
Soldering Temperature (10 s.).......................260°C
F
T =100°C
A
Package
Turn-0n Current
—
—
—
15
30
14
—
mA
—
V
=50 V
FX
I
FT
R
=10 kΩ
GK
8.0
2.0
V
=100 V
FX
R
=27 kΩ
GK
Isolation
Capacitance
—
pF
f=1.0 MHz
Document Number: 83603
Revision 17-August-01
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