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4N40.W PDF预览

4N40.W

更新时间: 2024-01-11 04:44:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 可控硅光电
页数 文件大小 规格书
8页 174K
描述
SCR Output Optocoupler, 1-Element, 5300V Isolation, DIP-6

4N40.W 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82最大输入触发电流:0.014 A
最大绝缘电压:5300 V安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.3 A
最大通态电压:1.3 V最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:SCR OUTPUT OPTOCOUPLER
峰值浪涌电流:10 A断态重复峰值电压:400 V
最大反向漏电流:0.00015 A子类别:Optocoupler - Trigger Device Outputs
表面贴装:NO

4N40.W 数据手册

 浏览型号4N40.W的Datasheet PDF文件第2页浏览型号4N40.W的Datasheet PDF文件第3页浏览型号4N40.W的Datasheet PDF文件第4页浏览型号4N40.W的Datasheet PDF文件第5页浏览型号4N40.W的Datasheet PDF文件第6页浏览型号4N40.W的Datasheet PDF文件第7页 
PHOTO SCR OPTOCOUPLERS  
DESCRIPTION  
The 4N39 and 4N40 have a gallium-arsenide infrared  
emitting diode optically coupled with a light activated sil-  
icon controlled rectifier in a dual in-line package.  
4N39  
4N40  
FEATURES  
• 10 A, T2L compatible, solid state relay  
• 25 W logic indicator lamp driver  
6
6
• 400 V symmetrical transistor coupler  
• Underwriters Laboratory (UL) recognized  
SCHEMATIC  
1
File #E90700  
1
ANODE  
CATHODE  
N/C  
1
6
GATE  
APPLICATIONS  
• Low power logic circuits  
Telecommunications equipment  
• Portable electronics  
2
3
5
4
ANODE  
CATHODE  
6
1
• Solid state relays  
• Interfacing coupling systems of different potentials and impedances.  
Parameter  
Symbol  
Device  
Value  
Units  
TOTAL DEVICE  
TSTG  
All  
-55 to +150  
-55 to +100  
°C  
*Storage Temperature  
*Operating Temperature  
*Lead Solder Temperature  
*Total Device Power Dissipation (-55°C to 50 °C)  
Derate above 50°C  
TOPR  
TSOL  
All  
All  
°C  
°C  
260 for 10 sec  
450  
9.0  
mW  
PD  
IF  
All  
All  
mW/°C  
EMITTER  
60  
mA  
*Continuous Forward Current  
*Reverse Voltage  
VR  
All  
All  
6
V
A
*Forward Current - Peak (300 µs, 2% Duty Cycle)  
*LED Power Dissipation (-55°C to 50 °C)  
Derate above 50°C  
IF(pk)  
1.0  
100  
2.0  
mW  
mW/°C  
PD  
All  
DETECTOR  
4N39  
4N40  
200  
400  
6
V
V
*Off-State And Reverse Voltage  
*Peak Reverse Gate Voltage  
*Direct On-State Current  
V
300  
10  
mA  
A
*Surge On-State Current (100 µs)  
*Peak Gate Current  
10  
mA  
mW  
mW/°C  
*Detector Power Dissipation (-55°C to 50°C)  
Derate above 50°C  
400  
8.0  
PD  
All  
Note  
* Indicates JEDEC Registered Data  
** Typical values at TA = 25°C  
2001 Fairchild Semiconductor Corporation  
DS300381  
2/27/01  
1 OF 8  
www.fairchildsemi.com  

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