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4N30M PDF预览

4N30M

更新时间: 2024-02-14 00:47:34
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 输出元件
页数 文件大小 规格书
11页 958K
描述
1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER, DIP-6

4N30M 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:DIP
包装说明:DIP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:3.21
Is Samacsys:N其他特性:UL APPROVED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
标称电流传输比:100%最大暗电源:100 nA
最大正向电流:0.08 A最大绝缘电压:7500 V
JESD-609代码:e3元件数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER端子面层:Matte Tin (Sn)
Base Number Matches:1

4N30M 数据手册

 浏览型号4N30M的Datasheet PDF文件第2页浏览型号4N30M的Datasheet PDF文件第3页浏览型号4N30M的Datasheet PDF文件第4页浏览型号4N30M的Datasheet PDF文件第6页浏览型号4N30M的Datasheet PDF文件第7页浏览型号4N30M的Datasheet PDF文件第8页 
Electrical Characteristics (T = 25°C Unless otherwise specified.) (Continued)  
A
Isolation Characteristics  
Symbol  
Characteristic  
Test Conditions  
f = 60Hz, t = 1 sec.  
VDC  
Device Min. Typ. Max.  
Units  
(5)  
V
Input-Output Isolation Voltage  
All  
4N32M*  
4N33M*  
All  
7500  
2500  
1500  
V
PEAK  
ISO  
AC  
V
VDC  
(5)  
11  
R
C
Isolation Resistance  
V
V
= 500VDC  
10  
ISO  
ISO  
I-O  
I-O  
(5)  
Isolation Capacitance  
= Ø, f = 1MHz  
All  
0.8  
pF  
* Indicates JEDEC registered data.  
Notes:  
1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.  
C
F
2. Pulse test: pulse width = 300µs, duty cycle 2.0% .  
3. I adjusted to I = 2.0mA and I = 0.7mA rms.  
F
C
C
4. The frequency at which I is 3dB down from the 1kHz value.  
C
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.  
Safety and Insulation Ratings  
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Installation Classifications per DIN VDE 0110/1.89  
Table 1  
For Rated Main Voltage < 150Vrms  
For Rated Main voltage < 300Vrms  
Climatic Classification  
I-IV  
I-IV  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
V
V
PR  
peak  
V
x 1.875 = V , 100% Production Test  
IORM  
PR  
with tm = 1 sec, Partial Discharge < 5pC  
Input to Output Test Voltage, Method a,  
1275  
peak  
V
x 1.5 = V , Type and Sample Test  
PR  
IORM  
with tm = 60 sec, Partial Discharge < 5pC  
Max. Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
V
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
External Clearance  
7
Insulation Thickness  
0.5  
9
RIO  
Insulation Resistance at Ts, V = 500V  
10  
IO  
©2007 Fairchild Semiconductor Corporation  
4NXXM, H11B1M, TIL113M Rev. 1.0.3  
www.fairchildsemi.com  
4

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