4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Forward voltage
Test Conditions
IF=10mA
Min
Typ
1.24
1.45
-
Max
1.4
1.5
5
Units Notes
V
V
VF
VF
IR
Forward voltage
Reverse Current
Input Capacitance
H11B3
IF=50mA
VR = 6V
f= 1MHz
-
-
µA
pF
45
-
CIN
Detector Characteristics
Symbol
BVCEO
BVECO
BVCBO
ICEO
Parameters
Test Conditions
Min
55
7
Typ
Max
Units
V
Notes
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base Breakdown
Collector-Emitter Dark Current
IC= 100µA
-
-
-
-
-
IE= 100µA
-
-
V
IC= 100µA
55
-
V
VCE= 10V, IF=0mA
100
nA
Transfer Characteristics
Symbol
Parameters
4N29, 4N30
4N31
Test Conditions
Min
100
50
Typ
Max
Units
Notes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IF= 10mA, VCE= 10V
4N32, 4N33
H11B1
500
500
200
100
100
300
Current
Transfer
Ratio
%
CTR
H11B2
IF= 1mA, VCE= 10V
H11B3
H11B255
TIL113
IF= 10mA, VCE= 5V
IF= 10mA, VCE= 1V
Collector-
Emitter
4N29, 4N30, 4N32,
4N33
IF= 8mA, IC= 2mA
IF= 8mA, IC= 2mA
IF= 1mA, IC= 1mA
-
-
-
-
-
-
-
1.0
1.2
1.0
1.0
Saturation
Voltage
4N31, TIL113
H11B1, H11B2,
H11B3
V
VCE(SAT)
H11B255
IF=50mA, IC= 50mA
VIO= 500VDC
f= 1Mhz
-
Isolation Resistance
Isolation Capacitance
1x1011
Ω
RIO
CIO
0.25
pF
CT Microelectronics
Proprietary & Confidential
Rev 1
Apr, 2014
Page 3