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4N26M PDF预览

4N26M

更新时间: 2024-02-24 08:21:32
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 输出元件光电
页数 文件大小 规格书
10页 940K
描述
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-6

4N26M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:DIP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.42
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:30 V
配置:SINGLE标称电流传输比:20%
最大暗电源:50 nA最大正向电流:0.06 A
最大绝缘电压:7500 VJESD-609代码:e3
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
端子面层:Matte Tin (Sn)Base Number Matches:1

4N26M 数据手册

 浏览型号4N26M的Datasheet PDF文件第1页浏览型号4N26M的Datasheet PDF文件第2页浏览型号4N26M的Datasheet PDF文件第4页浏览型号4N26M的Datasheet PDF文件第5页浏览型号4N26M的Datasheet PDF文件第6页浏览型号4N26M的Datasheet PDF文件第7页 
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Wave solder temperature (see page 8 for reflow solder profile)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
6
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
30  
70  
V
V
CEO  
CBO  
ECO  
7
V
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
mW/°C  
D
A
Derate above 25°C  
Electrical Characteristics (T = 25°C unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.* Max. Unit  
V
Input Forward Voltage  
I = 10mA  
1.18  
1.50  
10  
V
F
F
I
Reverse Leakage Current  
V = 6.0V  
0.001  
µA  
R
R
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
Collector-Emitter Dark Current  
Collector-Base Dark Current  
Capacitance  
I = 1.0mA, I = 0  
30  
70  
7
100  
120  
10  
V
V
CEO  
CBO  
ECO  
C
F
I = 100µA, I = 0  
C
F
I = 100µA, I = 0  
V
E
F
I
I
V
= 10V, I = 0  
1
50  
20  
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
V
V
= 10V  
C
= 0V, f = 1 MHz  
8
CE  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min. Typ.* Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec  
7500  
Vac(pk)  
ISO  
ISO  
ISO  
11  
V
V
= 500 VDC  
10  
I-O  
I-O  
Isolation Capacitance  
= &, f = 1MHz  
0.2  
2
pF  
*Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
2

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