Datasheet > 4N25SR2M

4N25SR2M

更新时间： 2024-01-25 23:00:05

品牌	Logo	应用领域
罗彻斯特 - ROCHESTER		PC 输出元件光电
页数	文件大小	规格书
10页	940K
描述
1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, DIP-6

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技术参数
数据手册

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4N25SR2M 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	DIP-6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.40.80.00
Factory Lead Time：	1 week	风险等级：	0.82
其他特性：	UL RECOGNIZED	Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE	当前传输比率-最小值：	20%
标称电流传输比：	20%	最大暗电源：	50 nA
最大正向电流：	0.06 A	最大正向电压：	1.5 V
最大绝缘电压：	7500 V	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	最大功率耗散：	0.15 W
子类别：	Optocoupler - Transistor Outputs	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

4N25SR2M 数据手册

Electrical Characteristics ^{(Continued) (T = 25°C unless otherwise speciﬁed)}

Transfer Characteristics

Symbol

Parameter

Test Conditions

Device

Min. Typ.* Max. Unit

DC CHARACTERISTICS

CTR

Current Transfer Ratio,

Collector to Emitter

I = 10mA, V = 10V

4N35M, 4N36M,

4N37M

100

H11A1M

H11A5M

4N25M, 4N26M

H11A2M, H11A3M

4N27M, 4N28M

H11A4M

I = 10mA, V = 10V,

4N35M, 4N36M,

4N37M

T = -55°C

I = 10mA, V = 10V,

4N35M, 4N36M,

4N37M

T = +100°C

Collector-Emitter

Saturation Voltage

I = 2mA, I = 50mA

4N25M, 4N26M,

4N27M, 4N28M,

0.5

0.3

0.4

CE (SAT)

I = 0.5mA, I = 10mA

4N35M, 4N36M,

4N37M

H11A1M, H11A2M,

H11A3M, H11A4M,

H11A5M

AC CHARACTERISTICS

Non-Saturated

Turn-on Time

I = 10mA, V = 10V,

4N25M, 4N26M,

4N27M, 4N28M,

H11A1M, H11A2M,

H11A3M, H11A4,

H11A5M

µs

R = 100Ω (Fig. 11)

I = 2mA, V = 10V,

4N35M, 4N36M,

4N37M

µs

R = 100Ω (Fig. 11)

Turn-off Time

I = 10mA, V = 10V,

4N25M, 4N26M,

4N27M, 4N28M,

H11A1M, H11A2M,

H11A3M, H11A4M,

H11A5M

OFF

R = 100Ω (Fig. 11)

I = 2mA, V = 10V,

4N35M, 4N36M,

4N37M

R = 100Ω (Fig. 11)

* Typical values at T = 25°C

4NXXM, H11AXM Rev. 1.0.2

www.fairchildsemi.com

1 2 345 6 7...10

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