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4N25-X006 PDF预览

4N25-X006

更新时间: 2024-02-15 23:57:10
品牌 Logo 应用领域
威世 - VISHAY 晶体光电晶体管光电晶体管输出元件
页数 文件大小 规格书
9页 148K
描述
Optocoupler, Phototransistor Output, With Base Connection

4N25-X006 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.8
当前传输比率-最小值:20%最大正向电流:0.06 A
最大正向电压:1.5 V最大绝缘电压:5300 V
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:0.05 A
最高工作温度:100 °C最低工作温度:-55 °C
最大功率耗散:0.15 W子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

4N25-X006 数据手册

 浏览型号4N25-X006的Datasheet PDF文件第1页浏览型号4N25-X006的Datasheet PDF文件第3页浏览型号4N25-X006的Datasheet PDF文件第4页浏览型号4N25-X006的Datasheet PDF文件第5页浏览型号4N25-X006的Datasheet PDF文件第6页浏览型号4N25-X006的Datasheet PDF文件第7页 
4N25/ 4N26/ 4N27/ 4N28  
Vishay Semiconductors  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
Maximum Rating for extended periods of the time can adversely affect reliability.  
Input  
Parameter  
Test condition  
Symbol  
Value  
6.0  
Unit  
V
Reverse voltage  
V
R
Forward current  
Surge current  
I
60  
2.5  
100  
mA  
A
F
t < 10 µs  
I
FSM  
Power dissipation  
P
mW  
diss  
Output  
Parameter  
Test condition  
Symbol  
Value  
70  
Unit  
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector current  
V
V
CEO  
EBO  
7.0  
50  
V
I
I
mA  
mA  
mW  
C
Collector currrent  
t < 1.0 ms  
100  
150  
C
Power dissipation  
P
diss  
Coupler  
Parameter  
Test condition  
Symbol  
Value  
5300  
Unit  
Isolation test voltage  
V
V
ISO  
RMS  
mm  
mm  
mm  
Creepage  
Clearance  
7.0  
7.0  
0.4  
Isolation thickness between  
emitter and detector  
Comparative tracking index  
Isolation resistance  
DIN IEC 112/VDE0303, part 1  
175  
12  
V
V
= 500 V, T  
= 500 V, T  
= 25 °C  
R
IO  
IO  
amb  
amb  
IO  
IO  
10  
11  
= 100 °C  
R
10  
Storage temperature  
Operating temperature  
Junction temperature  
Soldering temperature  
T
- 55 to + 150  
- 55 to + 100  
100  
°C  
°C  
°C  
°C  
stg  
T
amb  
T
j
max.10 s, dip soldering:  
distance to seating plane  
1.5 mm  
T
260  
sld  
www.vishay.com  
2
Document Number 83725  
Rev. 1.4, 26-Jan-05  

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