4N25-X, 4N26-X, 4N27-X, 4N28-X
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
OUTPUT
VR
IF
IFSM
Pdiss
6
V
mA
A
60
2.5
70
t ≤ 10 μs
mW
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
VCEO
VEBO
IC
ICM
Pdiss
70
7
50
100
150
V
V
mA
mA
mW
tp/T = 0.5, tp ≤ 10 ms
Isolation test voltage
Creepage distance
Clearance distance
VISO
5000
≥ 7
≥ 7
VRMS
mm
mm
Isolation thickness between emitter and
detector
≥ 0.4
mm
Comparative tracking index
DIN IEC 112/VDE0303, part 1
VIO = 500 V, Tamb = 25 °C
VIO = 500 V, Tamb = 100 °C
≥ 175
≥ 1012
RIO
RIO
Tstg
Tamb
Tj
Ω
Ω
°C
°C
°C
°C
Isolation resistance
≥ 1011
Storage temperature
Operating temperature
Junction temperature
Soldering temperature (1)
- 55 to + 150
- 55 to + 100
100
2 mm from case, ≤ 10 s
Tsld
260
Notes
•
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage (1)
IF = 50 mA
VR = 3.0 V
VF
IR
CO
1.36
0.1
25
1.5
100
V
μA
pF
Reverse current (1)
Capacitance
V
R = 0 V
OUTPUT
Collector base breakdown voltage (1)
Collector emitter breakdown voltage(1)
Emitter collector breakdown voltage (1)
IC = 100 μA
IC = 1.0 mA
IE = 100 μA
BVCBO
BVCEO
BVECO
70
30
7
V
V
V
4N25
4N26
4N27
4N28
5
5
5
50
50
50
nA
nA
nA
nA
I
CEO(dark) (1)
VCE = 10 V, (base open)
10
100
VCB = 10 V,
(emitter open)
I
CBO(dark) (1)
2.0
6.0
20
nA
pF
Collector emitter capacitance
COUPLER
VCE = 0
CCE
Isolation test voltage (1)
Saturation voltage, collector emitter
Resistance, input output (1)
Capacitance, input output
Peak, 60 Hz
ICE = 2.0 mA, IF = 50 mA
VIO = 500 V
VIO
VCE(sat)
RIO
5000
100
V
V
GΩ
pF
0.5
f = 1 MHz
CIO
0.5
Notes
•
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
Rev. 1.2, 16-Jan-12
Document Number: 81864
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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