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3HP04S

更新时间: 2024-02-17 01:05:38
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三洋 - SANYO 开关通用开关
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4页 52K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

3HP04S 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.3
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):0.2 A最大漏极电流 (ID):0.2 A
最大漏源导通电阻:1.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

3HP04S 数据手册

 浏览型号3HP04S的Datasheet PDF文件第2页浏览型号3HP04S的Datasheet PDF文件第3页浏览型号3HP04S的Datasheet PDF文件第4页 
Ordering number : ENA0877  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
3HP04S  
Features  
4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--30  
±20  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
D
--200  
--800  
0.15  
150  
mA  
mA  
W
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
DP  
P
Mounted on a glass-epoxy printed circuit board (145801.6mm)  
D
Tch  
°C  
°C  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
min  
Unit  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=-- 1mA, V =0V  
D GS  
-- 30  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
=-- 30V, V =0V  
GS  
-- 1  
±10  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
V
(off)  
GS  
=-- 10V, I =-- 100µA  
-- 1.2  
150  
-- 2.6  
D
Forward Transfer Admittance  
yfs  
=-- 10V, I =-- 100mA  
250  
1.4  
2.8  
22  
mS  
D
R
(on)1  
I
I
=-- 100mA, V =-- 10V  
D GS  
1.9  
4.0  
DS  
Static Drain-to-Source On-State Resistance  
R
(on)2  
=-- 50mA, V =-- 4V  
D GS  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : XH  
Ciss  
V
V
V
=-- 10V, f=1MHz  
DS  
=-- 10V, f=1MHz  
DS  
=-- 10V, f=1MHz  
DS  
pF  
pF  
pF  
Coss  
Crss  
6.0  
3.5  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1407PE TI IM TC-00001001 No. A0877-1/4  

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