Datasheet > 39N20L-T47-T

39N20L-T47-T

更新时间： 2022-02-26 12:24:38

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描述
39A, 200V N-CHANNEL POWER MOSFET

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39N20L-T47-T 数据手册

39N20

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

RATINGS

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

Continuous

(V_GS=10V) T_C=25°C

Pulsed

I_D

Drain Current

I_DM

E_AS

P_D

156

860

Single Pulsed Avalanche Energy (Note 2)

Power Dissipation

310

Junction Temperature

T_J

+150

°C

Storage Temperature

T_STG

-55~+150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Starting T_J= 25°C, L = 0.85mH, I_AS= 39A, V_DD=50V, R_G=25ꢀ.

3. Pulse Width = 100μs

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

0.37

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSSI_D=250µA, V_GS=0V

I_DSSV_DS=200V, V_GS=0V

_GS=+20V, V_DS=0V

V_GS=-20V, V_DS=0V

200

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage

Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=250µA

Static Drain-Source On-State Resistance R_DS(ON)V_GS=10V, I_D=19.5A

66 mꢀ

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

1250

190

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge at 10V

Gate to Source Charge

Gate to Drain Charge

Turn-ON Time

_GS=0V, V_DS=25V, f=1.0MHz

Q_G

Q_GS

Q_GD

t_ON

18.5 28 nC

_GS=10V,V_DD=50V,I_D=39A

6.5

4.6

Turn-ON Delay Time

Rise Time

t_D(ON)

t_R

160

150

V_DD=50V, I_D=39A, V_GS=10V,

R_G=16ꢀ

Turn-OFF Delay Time

t_D(OFF)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source

Diode Forward Current

V_SD

I_SD=39A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

156

UNISONIC TECHNOLOGIES CO., LTD

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QW-R502-817.a

www.unisonic.com.tw

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