Freescale Semiconductor, Inc.
STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 4.5 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 27 V, -40°C ≤ TJ ≤ 150°C unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUT
RDS(ON)
mΩ
Output Drain-to-Source ON Resistance (IHS[0:1] = 30 A, TJ = 25°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
–
–
–
–
–
–
6.0
4.0
4.0
RDS(ON)
mΩ
Output Drain-to-Source ON Resistance (IHS[0:1] = 30 A, TJ = 150°C)
VPWR = 6.0 V
VPWR = 10 V
VPWR = 13 V
–
–
–
–
–
–
10.2
6.8
6.8
RDS(ON)
mΩ
Output Source-to-Drain ON Resistance IHS[0:1] = 15 A, TJ = 25°C (Note 10)
–
–
8.0
V
PWR = -12 V
Output Overcurrent High Detection Levels (9.0 V < VPWR < 16 V)
A
IOCH0
IOCH1
80
60
100
75
120
90
SOCH = 0
SOCH = 1
Overcurrent Low Detection Levels (SOCL[2:0])
A
IOCL0
IOCL1
IOCL2
IOCL3
IOCL4
IOCL5
IOCL6
IOCL7
21
18
16
14
12
10
8.0
6.0
25
22.5
20
29
27
24
21
17
15
12
9.0
000
001
010
011
100
101
110
111
17.5
15
12.5
10
7.5
Current Sense Ratio (9.0 V < VPWR < 16 V, CSNS < 4.5 V)
–
CSR0
CSR1
–
–
1/20500
1/41000
–
–
DICR D2 = 0
DICR D2 = 1
Current Sense Ratio (CSR0) Accuracy
CSR0_ACC
%
Output Current
5.0 A
-20
-14
-13
-12
-13
-13
–
–
–
–
–
–
20
14
13
12
13
13
10 A
12.5 A
15 A
20 A
25 A
Notes
10. Source-Drain ON Resistance (Reverse Drain-to-Source ON Resistance) with negative polarity VPWR
.
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MOTOROLA ANALOG INTEGRATED CIRFCoUIrTMDEoVrICeEIDnAfToArmation On This Product,
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