ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions -0.3V ≤ VBUSIN ≤ 30V, 6.0V ≤ VH_CAP ≤ 30V, -40°C ≤ TA ≤ 125°C,
RTNIN=AGND = 0V, unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under
nominal conditions, unless otherwise noted.
Characteristic
Internal Quiescent Current Drain
= 25V, I/O = Input
Symbol
Min
Typ
Max
Unit
IQ
mA
V
–
–
4.0
H_CAP
BUSIN to H_CAP Rectifier Voltage Drop
VRECT
V
I
I
= 15mA
–
–
0.75
0.9
1.00
1.4
HCAP
HCAP
= 100mA
H_CAP Diode Efficiency(4)
= 400mA, BUSIN = 25V
%
I
99
–
–
–
HCAP
BUSIN Bias Current
IBIAS
μA
V
V
= 8.0V, VH_CAP = 9.0V
-100
-100
100
100
BUSIN
BUSIN
= 4.5V, VH_CAP = 9.0V when device is not signalling
Rectifier Leakage Current
VBUSIN = 0V, VH_CAP = 25V
IRLKG
-20
4.9
–
–
20
5.1
20
μA
V
REGOUT
VRO
5.0
–
5.8V < VH_CAP ≤ 25V, 0 ≤ IRO ≤ 14mA
REGOUT Line Regulation
VRLINE
mV
IRO = 14mA, 6.0V ≤ VH CAP ≤ 25V
IRO is the total internal and external load current
REGOUT Load Regulation
VRLD
–
–
–
–
15
mV
mV
0 ≤ IRO ≤ 14mA, 6.0V ≤ VH CAP ≤ 25V,
REGOUT Transient Line Regulation(5)
(25)
IRO = 14mA, 0 V ≤ VBUSIN ≤ 30 V, 8V/us @ BUSIN, or, 5V/us @
HCAP
CRO = 2.2 uF, CRO ESR = 0.063-2.2Ω @ 20kHz,
0.004-0.072Ω @ 200kHz
REGOUT Transient Load Regulation(5)
0 ≤ IRO ≤ 14mA, 6.0V ≤ VH CAP ≤ 25V, 2mA/us @ IRO,
CRO = 2.2uF, CRO ESR = 0.063-2.2Ω @ 20kHz,
0.004-0.072Ω @ 200kHz
–
–
(50)
mV
REGOUT Current Limit, VREGOUT = 0V
ILMT
25
–
35
45
mA
Hi-side Bus Switch Resistance
RSWH
Ω
0 ≤ VBUSIN ≤ 30V, ISWH = 160mA (Bus Switch Active)
3.0
6.0
Low-side Bus Switch Resistance
ISWL = 160mA (Bus Switch Active)
RSWL
Ω
–
3.0
6.0
Notes
4. EFF = 400mA/IBUSIN - IQ
5. Assured by design.
33784
Analog Integrated Circuit Device Data
Freescale Semiconductor
5