Datasheet > 2W005G_13

2W005G_13

更新时间： 2022-05-21 01:38:16

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	89K
描述
Glass Passivated Single-Phase Bridge Rectifier

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数据手册

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2W005G_13 数据手册

2W005G thru 2W10G

Vishay General Semiconductor

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mVp-p

T_J= 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

0.1

0.01

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Forward Characteristics Per Diode

Figure 5. Typical Junction Capacitance Per Diode

100

T_J= 125 °C

T_J= 100 °C

0.1

0.01

_J= 25 °C

0.1

0.01

100

0.1

100

t - Heating Time (s)

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics Per Diode

Figure 6. Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style WOG

0.388 (9.86)

0.348 (8.84)

0.220 (5.6)

0.160 (4.1)

1.0 (25.4) MIN.

0.032 (0.81)

0.028 (0.71)

0.060 (1.52)

0.020 (0.51)

0.220 (5.6)

0.180 (4.6)

0.348 (8.84)

0.308 (7.82)

0.220 (5.6)

0.180 (4.6)

Document Number: 88528

Revision: 15-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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