DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ324,324-Z
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWINGS (Unit: mm)
The 2SJ324 is P-channel MOS Field Effect Transistor designed for
solenoid, motor and lamp driver.
2.3 ±0.2
0.5 ±0.1
6.5 ±0.2
5.0 ±0.2
4
FEATURES
• Low On-state Resistance
RDS(on) = 0.18 Ω TYP. (VGS = −10 V, ID = −1.0 A)
RDS(on) = 0.36 Ω TYP. (VGS = −4 V, ID = −0.8 A)
• Low Ciss: Ciss = 330 pF TYP.
1
2
3
1.1 ±0.2
• Built-in G-S Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
0.5 +−00..12
0.5 +−00..21
2.3 2.3
Drain to Source Voltage
VDSS
VGSS
VGSS
ID(DC)
ID(pulse)
PT1
−30
m20
V
V
Gate to Source Voltage (AC)
Gate to Source Voltage (DC)
Drain Current (DC)
−20, +10
m2.0
V
A
<R>
TO-251 (MP-3)
Drain Current (pulse) Note
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
m8.0
A
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
20
W
W
°C
°C
2.3 ±0.2
PT2
1.0
0.5 ±0.1
Note
Note
Tch
150
4
Storage Temperature
Tstg
−55 to +150
1
2 3
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
EQUIVALENT CIRCUIT
0.15 ±0.15
Electrode Connection
1. Gate
2. Drain
TO-252 (MP-3Z)
3. Source
4. Drain Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18327EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
1993, 2006
The mark <R> shows major revised points.
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