Datasheet > 2SD1581M

2SD1581M

更新时间： 2024-01-20 15:18:04

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	106K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| TO-221VAR

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2SD1581M 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	2 A	配置：	Single
最小直流电流增益 (hFE)：	800	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

2SD1581M 数据手册

DATA SHEET

SILICON TRANSISTOR

2SD1581

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS

PACKAGE DRAWING (UNIT: mm)

The 2SD1581 is a single type super high h^FEtransistor and low

collector saturation voltage and low power loss. This transistor is

ideal for use in high current drives such as mortars, relays, and

ramps.

FEATURES

•

Ultra high h^FE

h^FE= 800 to 3200 (@ V^CE= 5.0 V, I^C= 500 mA)

Low collector saturation voltage

•

V^CE(sat)= 0.18 V TYP. (@ I^C= 1.0 A, I^B= 10 mA)

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

2.0

3.0

1.0

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= 30 V, I^E= 0

MIN.

TYP.

1500

MAX.

100

Unit

−

I^EBO

V^EB= 10 V, I^C= 0

100

h^FE1

V^CE= 5.0 V, I^C= 500 mA

V^CE= 5.0 V, I^C= 2.0 mA

V^CE= 5.0 V, I^C= 300 mA

I^C= 1.0 A, I^B= 10 mA

800

400

600

3200

−

DC current gain

h^FE2

DC base voltage

V^BE

660

0.18

0.83

700

0.30

1.2

Collector saturation voltage

Base saturation voltage

Output capacitance

Gain bandwidth product

V^CE(sat)

V^BE(sat)

C^ob

V^CB= 10 V, I^E= 0, f = 1.0 MHz

MHz

V^CE= 10 V, I^E= −500 mA

f^T

150

350

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed

hFE¹/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16197EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4

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