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2SC4995 PDF预览

2SC4995

更新时间: 2024-02-10 03:17:40
品牌 Logo 应用领域
日立 - HITACHI 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
10页 68K
描述
Silicon NPN Epitaxial

2SC4995 技术参数

生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.68最大集电极电流 (IC):0.05 A
基于收集器的最大容量:1.05 pF集电极-发射极最大电压:8 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):11000 MHz
Base Number Matches:1

2SC4995 数据手册

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2SC4995  
Silicon NPN Epitaxial  
ADE-208-013  
1st. Edition  
Application  
VHF / UHF wide band amplifier  
Features  
High gain bandwidth product  
fT = 11 GHz Typ  
High gain, low noise figure  
PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz  
Outline  
CMPAK–4  
2
3
1
1. Collector  
2. Emitter  
3. Base  
4
4. Emitter  

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