2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
Unit: mm
•
•
•
High DC current gain h
= 600~3600
FE
:
High breakdown voltage: V
= 50 V
CEO
High collector current: I = 150 mA (max)
C
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
50
50
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
5
V
I
150
30
mA
mA
mW
°C
°C
C
Base current
I
B
Collector power dissipation
Junction temperature
Storage temperature range
P
400
125
−55~125
C
T
j
JEDEC
JEITA
TO-92
T
stg
SC-43
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
= 50 V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
V
V
⎯
⎯
⎯
⎯
0.1
0.1
μA
μA
CBO
CB
EB
E
I
= 5 V, I = 0
C
EBO
h
FE
(Note)
DC current gain
V
= 6 V, I = 2 mA
600
⎯
3600
CE
C
Collector-emitter saturation voltage
Transition frequency
V
I
= 100 mA, I = 10 mA
⎯
100
⎯
0.12
250
3.5
0.25
⎯
V
CE (sat)
C
B
f
V
V
V
= 10 V, I = 10 mA
MHz
pF
T
CE
CB
CE
C
Collector output capacitance
C
= 10 V, I = 0, f = 1 MHz
⎯
ob
E
= 6 V, I = 0.1 mA, f = 100 Hz,
C
NF (1)
NF (2)
⎯
⎯
0.5
0.3
⎯
⎯
R
= 10 kΩ
G
Noise figure
dB
V
R
= 6 V, I = 0.1 mA, f = 1 kHz,
CE
C
= 10 kΩ
G
Note: h classification A: 600~1800, B: 1200~3600
FE
1
2007-11-01