2SA1030-B

更新时间： 2024-01-13 06:40:20

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体小信号双极晶体管
页数	文件大小	规格书
6页	161K
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数据手册

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2SA1030-B 数据手册

2SA1029, 2SA1030

Electrical Characteristics

(Ta = 25°C)

2SA1029

Typ

2SA1030

Typ

Item

Symbol

Min

Max

Min

Max

Unit

Test conditions

Collector to base

breakdown voltage

V_(BR)CBO

–30

—

–55

—

I_C= –10 µA, I_E= 0

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Collector to emitter

breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

–30

–5

—

–50

–5

—

Emitter to base

breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current trnsfer ratio

—

–0.5

500

—

–0.5

320

µA V_CB= –18 V, I_E= 0

µA V_EB= –2 V, I_C= 0

I_EBO

h_FE

100

V_CE= –12 V,

I_C= –2 mA

Base to emitter voltage

V_BE

V_CE(sat)

f_T

—

–0.8

–0.2

—

–0.8

–0.2

—

V_CE= –12 V,

I_C= –2 mA

Collector to emitter

saturation voltage

I_C= –10 mA,

I_B= –1 mA

Gain bandwidth product

200

—

280

3.3

200

—

280

3.3

MHz V_CB= –12 V,

I_C= –2 mA

Collector output

capacitance

Cob

4.0

pF V_CB= –10 V, I_E= 0,

f = 1 MHz

Note: 1. The 2SA1029 and 2SA1030 are grouped by h_FEas follows.

250 to 500

—

2SA1029

2SA1030

100 to 200

160 to 320

Rev.3.00 Aug 10, 2005 page 2 of 5

123 4 5 6

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与2SA1030-B相关器件

型号	品牌	描述	获取价格	数据表
2SA1030BRF	HITACHI	暂无描述	获取价格
2SA1030BRR	HITACHI	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	获取价格
2SA1030BTZ	RENESAS	Silicon PNP Epitaxial	获取价格
2SA1030C	HITACHI	Small Signal Bipolar Transistor, 0.1A I(C), PNP, TO-92	获取价格
2SA1030-C	HITACHI	SMALL SIGNAL TRANSISTOR, TO-92	获取价格
2SA1030CRF	HITACHI	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,	获取价格