5秒后页面跳转
2SA1029TZ PDF预览

2SA1029TZ

更新时间: 2024-02-15 11:52:36
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号双极晶体管
页数 文件大小 规格书
6页 161K
描述
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

2SA1029TZ 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.43最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2SA1029TZ 数据手册

 浏览型号2SA1029TZ的Datasheet PDF文件第1页浏览型号2SA1029TZ的Datasheet PDF文件第2页浏览型号2SA1029TZ的Datasheet PDF文件第3页浏览型号2SA1029TZ的Datasheet PDF文件第4页浏览型号2SA1029TZ的Datasheet PDF文件第5页 
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technouct best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belochnology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-parthe use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and on on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without nr other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Rutor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other l
Please also pay attention to information published by Renesas Technology Corp. by vagy Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including progorithms, please be sure to  
evaluate all information as a total system before making a final decision on the aenesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the inform
5. Renesas Technology Corp. semiconductors are not designed or manufacturnder circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an auistributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus ol, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessarese materials.  
7. If these products or technologies are subject to the Japanese expunder a license from the Japanese government and  
cannot be imported into a country other than the approved dest
Any diversion or reexport contrary to the export control laws adestination is prohibited.  
8. Please contact Renesas Technology Corp. for further detaied therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/ormation.  
Renesas Technology America
450 Holger Way, San Jose, C
Tel: <1> (408) 382-7500, F
Renesas Technology
Dukes Meadow, Millboare, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100
Renesas Technology Hong K
7th Floor, North Tower, World Finur City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852>
Renesas Technology Taiwan Co., Ltd
10th Floor, No.99, Fushing North Road, Tei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  

与2SA1029TZ相关器件

型号 品牌 描述 获取价格 数据表
2SA103 ETC Ge PNP Drift

获取价格

2SA1030 HITACHI Silicon PNP Epitaxial

获取价格

2SA1030 RENESAS Silicon PNP Epitaxial

获取价格

2SA1030B HITACHI Small Signal Bipolar Transistor, 0.1A I(C), PNP, TO-92

获取价格

2SA1030-B RENESAS 暂无描述

获取价格

2SA1030-B HITACHI SMALL SIGNAL TRANSISTOR, TO-92

获取价格