2SA1025ERF

更新时间： 2024-02-08 01:20:50

品牌	Logo	应用领域
日立 - HITACHI		晶体小信号双极晶体管放大器
页数	文件大小	规格书
5页	27K
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数据手册

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2SA1025ERF 数据手册

2SA1025, 2SA1081, 2SA1082

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

2SA1025

–60

2SA1081

–90

2SA1082

–120

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–60

–90

–120

–5

–100

100

–100

100

–100

°C

Emitter current

I_E

100

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

2SA1025

2SA1081

2SA1082

Item

Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions

Collector to base

V_(BR)CBO–60

V_(BR)CEO–60

V_(BR)EBO–5

—

–90

–5

—

–120 —

—

I_C= –10 µA, I_E= 0

breakdown voltage

Collector to emitter

breakdown voltage

–120 —

I_C= –1 mA,

R_BE= ∞

Emitter to base

–5

—

µA

I_E= –10 µA, I_C= 0

breakdown voltage

Collector cutoff current I_CBO

Emitter cutoff current I_EBO

DC current transfer ratio h_FE

—

–0.1

—

–0.1

800

—

–0.1 µA

–0.1

V_CB= –50 V, I_E= 0

V_EB= –2 V, I_C= 0

—

250

800 250

250

800

V_CE= –12 V,

I_C= –2 mA

Collector to emitter

saturation voltage

V_CE(sat)

—

–0.2

—

–0.2

—

–0.2

—

I_C= –10 mA,

I_B= –1 mA

Base to emitter voltage V_BE

–0.6

V_CE= –12 V,

I_C= –2 mA

Gain bandwidth product f_T

—

MHz V_CE= –12 V,

I_C= –2 mA

Collector output

capacitance

Cob

3.5

—

3.5

—

3.5

—

V_CB= –10 V, I_E= 0,

f = 1 MHz

Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h_FEas follows.

250 to 500

400 to 800

See characteristic curves of 2SA1083.

123 4 5

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