Datasheet > 2N7051D27Z

2N7051D27Z

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	73K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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2N7051D27Z 数据手册

2N7051

2N7053

NZT7053

TO-92

TO-226

SOT-223

NPN Darlington Transistor

This device is designed for applications requiring extremely high

gain at collector currents to 1.0 A and high breakdown voltage.

Sourced from Process 06.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

100

Collector-Base Voltage

100

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.5

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N7051

2N7053

*NZT7053

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

1,000

8.0

1,000

8.0

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

125

°C/W

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3 4

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