5秒后页面跳转
2N6292DW PDF预览

2N6292DW

更新时间: 2024-01-05 20:15:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
60页 371K
描述
7A, 70V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6292DW 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.74
外壳连接:COLLECTOR最大集电极电流 (IC):7 A
集电极-发射极最大电压:70 V配置:SINGLE
最小直流电流增益 (hFE):2.3JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

2N6292DW 数据手册

 浏览型号2N6292DW的Datasheet PDF文件第2页浏览型号2N6292DW的Datasheet PDF文件第3页浏览型号2N6292DW的Datasheet PDF文件第4页浏览型号2N6292DW的Datasheet PDF文件第5页浏览型号2N6292DW的Datasheet PDF文件第6页浏览型号2N6292DW的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
DC Current Gain Specified to 7.0 Amperes  
h
h
= 30–150 @ I = 3.0 Adc — 2N6111, 2N6288  
FE  
FE  
C
= 2.3 (Min) @ I = 7.0 Adc — All Devices  
C
Collector–Emitter Sustaining Voltage —  
V
V
V
= 30 Vdc (Min) — 2N6111, 2N6288  
= 50 Vdc (Min) — 2N6109  
= 70 Vdc (Min) — 2N6107, 2N6292  
CEO(sus)  
CEO(sus)  
CEO(sus)  
High Current Gain — Bandwidth Product  
f
f
= 4.0 MHz (Min) @ I = 500 mAdc — 2N6288, 90, 92  
T
T
C
= 10 MHz (Min) @ I = 500 mAdc — 2N6107, 09, 11  
C
*Motorola Preferred Device  
TO–220AB Compact Package  
7 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
*MAXIMUM RATINGS  
2N6111  
2N6288  
2N6107  
2N6292  
Rating  
Symbol  
2N6109  
Unit  
305070 VOLTS  
40 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
30  
40  
50  
60  
70  
80  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
7.0  
10  
Base Current  
I
B
3.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
CASE 221A–06  
TO–220AB  
Thermal Resistance, Junction to Case  
* Indicates JEDEC Registered Data.  
R
3.125  
C/W  
θJC  
40  
30  
20  
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
3–101  
Motorola Bipolar Power Transistor Device Data  

与2N6292DW相关器件

型号 品牌 描述 获取价格 数据表
2N6292G ONSEMI 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILI

获取价格

2N6292L MOTOROLA 7A, 70V, NPN, Si, POWER TRANSISTOR, TO-220AB

获取价格

2N6292LEADFREE CENTRAL Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

获取价格

2N6292S MOTOROLA Power Bipolar Transistor, 7A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti

获取价格

2N6292T MOTOROLA 7A, 70V, NPN, Si, POWER TRANSISTOR, TO-220AB

获取价格

2N6292U MOTOROLA 7 A, 70 V, NPN, Si, POWER TRANSISTOR, TO-220AB

获取价格